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XX1007-BD-000V Folha de dados(PDF) 1 Page - Mimix Broadband

Nome de Peças XX1007-BD-000V
Descrição Electrónicos  13.5-17.0/27.0-34.0 GHz GaAs MMIC Active Doubler
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Fabricante Electrônico  MIMIX [Mimix Broadband]
Página de início  http://www.mimixbroadband.com
Logo MIMIX - Mimix Broadband

XX1007-BD-000V Folha de dados(HTML) 1 Page - Mimix Broadband

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Mimix Broadband’s 13.5-17.0 / 27.0-34.0 GHz GaAs MMIC
doubler integrates a gain stage, passive doubler and driver
amplifier onto a single device. The XX1007-BD has a
self-biased architecture requiring a single positive supply
(+5V) only and integrated on-chip bypassing capacitor
eliminating the need for external capacitor. This MMIC uses
Mimix Broadband’s 0.15um GaAs PHEMT device model
technology, and is based upon electron beam lithography
to ensure high repeatability and uniformity. The chip has
integrated ESD structures for protection and surface
passivation to protect and provide a rugged part with
backside via holes and gold metallization to allow either a
conductive epoxy or eutectic solder die attach process.
This device is well suited for Millimeter wave Point-to-Point
Radio, LMDS, SATCOM and VSAT applications.
13.5-17.0/27.0-34.0 GHz GaAs MMIC
Active Doubler
Integrated Gain, Doubler and Driver Stages
Self-biased Architecture
+21.0 dBm Output Saturated Power
40.0 dBc Fundamental Suppression
On-Chip ESD Protection
100% On-Wafer RF, DC and Output Power Testing
100% Visual Inspection to MIL-STD-883 Method 2010
Features
General Description
Electrical Characteristics (AmbientTemperatureT = 25 oC)
Parameter
Input Frequency Range (fin)
Output Frequency Range (fout)
Input Return Loss (S11)
Output Return Loss (S22)
Fundamental Level at the Output
RF Input Power (RF Pin)
Output Power at 5.0 dBm Pin (Pout)
Drain Bias Voltage (Vd)
Supply Current (Id1,2,3) (Vd=5.0V Typical)
Units
GHz
GHz
dB
dB
dBc
dBm
dBm
VDC
mA
Min.
13.5
27.0
-
-
-
-
-
-
-
Typ.
-
-
-8.0
-10.0
-40.0
5.0
+21.0
+5.0
200
Max.
17.0
34.0
-
-
-
-
-
+5.5
240
Absolute Maximum Ratings
Supply Voltage (Vd)
Supply Current (Id)
Gate Bias Voltage (Vg)
Input Power (RF Pin)
Storage Temperature (Tstg)
Operating Temperature (Ta)
Channel Temperature (Tch)
+6.0 VDC
300 mA
+0.3 VDC
TBD
-65 to +165 OC
-55 to MTTF Table
MTTF Table
Functional Block Diagram
Page 1 of 6
1
(1) Channel temperature affects a device's MTTF. It is
recommended to keep channel temperature as low as
possible for maximum life.
1
X1007-BD
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Characteristic Data and Specifications are subject to change without notice.
©2008 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
February 2008 - Rev 13-Feb-08
X2
RF IN
Vd
RF OUT


Nº de peça semelhante - XX1007-BD-000V

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Descrição semelhante - XX1007-BD-000V

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