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AD8012ARMZ Folha de dados(PDF) 4 Page - Analog Devices

Nome de Peças AD8012ARMZ
Descrição Electrónicos  Dual 350 MHz Low Power Amplifier
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Fabricante Electrônico  AD [Analog Devices]
Página de início  http://www.analog.com
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AD8012ARMZ Folha de dados(HTML) 4 Page - Analog Devices

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REV. B
–4–
AD8012
MAXIMUM POWER DISSIPATION
The maximum power that can be safely dissipated by the AD8012
is limited by the associated rise in junction temperature. The maxi-
mum safe junction temperature for plastic encapsulated devices
is determined by the glass transition temperature of the plastic,
approximately +150
°C. Temporarily exceeding this limit may
cause a shift in parametric performance due to a change in the
stresses exerted on the die by the package. Exceeding a junction
temperature of +175
°C for an extended period can result in
device failure.
The output stage of the AD8012 is designed for maximum load
current capability. As a result, shorting the output to common
can cause the AD8012 to source or sink 500 mA. To ensure
proper operation, it is necessary to observe the maximum power
derating curves. Direct connection of the output to either power
supply rail can destroy the device.
AMBIENT TEMPERATURE – C
–50
0
TJ = 150 C
2.0
1.5
1.0
8-LEAD SOIC
PACKAGE
–40 –30
010
20
3040 50
6070
80 90
8-LEAD
MSOP
0.5
–20 –10
Figure 3. Plot of Maximum Power Dissipation vs.
Temperature for AD8012
0.1 F
0.1 F
10 F
10 F
RL
VIN
VOUT
750
750
49.9
+VS
–VS
+
+
Test Circuit 1. Gain = +2
0.1 F
0.1 F
10 F
10 F
RL
VIN
VOUT
750
750
53.6
+VS
–VS
+
+
Test Circuit 2. Gain = –1
Test Circuits


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