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AD8009JRT-R2 Folha de dados(PDF) 4 Page - Analog Devices

Nome de Peças AD8009JRT-R2
Descrição Electrónicos  1 GHz, 5,500 V/??Low Distortion Amplifier
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Fabricante Electrônico  AD [Analog Devices]
Página de início  http://www.analog.com
Logo AD - Analog Devices

AD8009JRT-R2 Folha de dados(HTML) 4 Page - Analog Devices

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AD8009
–4–
REV. F
CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily
accumulate on the human body and test equipment and can discharge without detection.
Although the AD8009 features proprietary ESD protection circuitry, permanent damage may
occur on devices subjected to high energy electrostatic discharges. Therefore, proper ESD
precautions are recommended to avoid performance degradation or loss of functionality.
ABSOLUTE MAXIMUM RATINGS
1
Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12.6 V
Internal Power Dissipation
2
Small Outline Package (R) . . . . . . . . . . . . . . . . . . . . . . . 0.75 W
Input Voltage (Common-Mode) . . . . . . . . . . . . . . . . . . . .
±VS
Differential Input Voltage . . . . . . . . . . . . . . . . . . . . . . .
±3.5 V
Output Short-Circuit Duration
. . . . . . . . . . . . . . . . . . . . . .Observe Power Derating Curves
Storage Temperature Range R Package . . . . –65
°C to +125°C
Operating Temperature Range (A Grade) . . . –40
°C to +85°C
Operating Temperature Range (J Grade) . . . . . . . 0
°C to 70°C
Lead Temperature Range (Soldering 10 sec) . . . . . . . . . 300
°C
NOTES
1Stresses above those listed under Absolute Maximum Ratings may cause perma-
nent damage to the device. This is a stress rating only; functional operation of the
device at these or any other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability.
2Specification is for device in free air:
8-Lead SOIC Package:
θ
JA = 155
°C/W.
5-Lead SOT-23 Package:
θ
JA = 240
°C/W.
MAXIMUM POWER DISSIPATION
The maximum power that can be safely dissipated by the AD8009
is limited by the associated rise in junction temperature. The maxi-
mum safe junction temperature for plastic encapsulated devices
is determined by the glass transition temperature of the plastic,
approximately 150
°C. Exceeding this limit temporarily may cause
a shift in parametric performance due to a change in the stresses
exerted on the die by the package. Exceeding a junction tempera-
ture of 175
°C for an extended period can result in device failure.
While the AD8009 is internally short circuit protected, this may
not be sufficient to guarantee that the maximum junction tempera-
ture (150
°C) is not exceeded under all conditions. To ensure
proper operation, it is necessary to observe the maximum power
derating curves.
AMBIENT TEMPERATURE ( C)
90
80
2.0
1.0
0
1.5
0.5
–50
TJ = 150 C
70
60
50
40
30
20
10
0
–40 –30 –20 –10
8-LEAD SOIC PACKAGE
5-LEAD SOT-23 PACKAGE
Figure 3. Plot of Maximum Power Dissipation vs.
Temperature
ORDERING GUIDE
Temperature
Package
Package
Model
Range
Description
Option
Branding
AD8009AR
–40
°C to +85°C
8-Lead SOIC
R-8
AD8009AR-REEL
–40
°C to +85°C
8-Lead SOIC
R-8
AD8009AR-REEL7
–40
°C to +85°C
8-Lead SOIC
R-8
AD8009ARZ
*
–40
°C to +85°C
8-Lead SOIC
R-8
AD8009ARZ-REEL
*
–40
°C to +85°C
8-Lead SOIC
R-8
AD8009ARZ-REEL7
*
–40
°C to +85°C
8-Lead SOIC
R-8
AD8009JRT-R2
0
°C to 70°C
5-Lead SOT-23
RT-5
HKJ
AD8009JRT-REEL
0
°C to 70°C
5-Lead SOT-23
RT-5
HKJ
AD8009JRT-REEL7
0
°C to 70°C
5-Lead SOT-23
RT-5
HKJ
AD8009JRTZ-REEL
*
0
°C to 70°C
5-Lead SOT-23
RT-5
HKJ
AD8009JRTZ-REEL7
*
0
°C to 70°C
5-Lead SOT-23
RT-5
HKJ
AD8009ACHIPS
Die
*Z = Pb-free part.


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