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M27128A-1F1 Folha de dados(PDF) 1 Page - STMicroelectronics |
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M27128A-1F1 Folha de dados(HTML) 1 Page - STMicroelectronics |
1 / 9 page AI00784B 11 A0-A10 Q0-Q7 VCC M2716 G EP VSS 8 VPP Figure 1. Logic Diagram M2716 NMOS 16K (2K x 8) UV EPROM 2048 x 8 ORGANIZATION 525mW Max ACTIVE POWER, 132mW Max STANDBY POWER ACCESS TIME: – M2716-1 is 350ns – M2716 is 450ns SINGLE 5V SUPPLY VOLTAGE STATIC-NO CLOCKS REQUIRED INPUTS and OUTPUTS TTL COMPATIBLE DURING BOTH READ and PROGRAM MODES THREE-STATE OUTPUT with TIED-OR- CAPABILITY EXTENDED TEMPERATURE RANGE PROGRAMMING VOLTAGE: 25V DESCRIPTION The M2716 is a 16,384 bit UV erasable and elec- trically programmable memory EPROM, ideally suited for applications where fast turn around and pattern experimentation are important require- ments. The M2716 is housed in a 24 pin Window Ceramic Frit-Seal Dual-in-Line package. The transparent lid allows the user to expose the chip to ultraviolet light to erase the bit pattern. A new pattern can then be written to the device by following the programming procedure. A0 - A10 Address Inputs Q0 - Q7 Data Outputs EP Chip Enable / Program G Output Enable VPP Program Supply VCC Supply Voltage VSS Ground Table 1. Signal Names 1 24 FDIP24W (F) July 1994 1/9 |
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