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TC2181 Folha de dados(PDF) 1 Page - List of Unclassifed Manufacturers

Nome de Peças TC2181
Descrição Electrónicos  Low Noise and High Dynamic Range Packaged GaAs FETs
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Fabricante Electrônico  ETC2 [List of Unclassifed Manufacturers]
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TRANSCOM
TC2181
TRANSCOM, INC., 90 Dasoong 7
th Road, Tainan Science-Based Industrial Park, Shanhua Jen, Tainan County, Taiwan, R.O.C.
Web-Site: www.transcominc.com.tw
Phone: 886-6-5050086
Fax: 886-6-5051602
75
January 2002
Low Noise and High Dynamic Range Packaged GaAs FETs
FEATURES
• 0.5 dB Typical Noise Figure at 12 GHz
• High Associated Gain:
Ga = 12 dB Typical at 12 GHz
• 18 dBm Typical Power at 12 GHz
• 13 dB Typical Linear Power Gain at 12 GHz
• Breakdown Voltage : BVDGO ≥ 9V
• Lg = 0.25 µm, Wg = 160 µm
• 100 % DC Tested
• Micro-X Metal Ceramic Package
DESCRIPTION
The TC2181 is a high performance field effect transistor housed in a ceramic micro-x package with
TC1101 PHEMT Chip. It has very low noise figure, high associated gain and high dynamic range that
makes this device suitable for use in low noise amplifiers. All devices are 100 % DC tested to assure
consistent quality.
ELECTRICAL SPECIFICATIONS (TA=25
°°°°C)
Symbol
CONDITIONS
MIN
TYP
MAX
UNIT
NF
Noise Figure at VDS = 2 V, IDS = 10 mA, f = 12GHz
0.5
0.7
dB
Ga
Associated Gain at VDS = 2 V, IDS = 10 mA, f = 12GHz
10
12
dB
P1dB
Output Power at 1dB Gain Compression Point, f = 12GHz
VDS = 4 V, IDS = 25 mA
16.5
18
dBm
GL
Linear Power Gain, f = 12GHz
VDS = 4 V, IDS = 25 mA
11
13
dB
IDSS
Saturated Drain-Source Current at VDS = 2 V, VGS = 0 V
40
mA
gm
Transconductance at VDS = 2 V, VGS = 0 V
55
mS
VP
Pinch-off Voltage at VDS = 2 V, ID = 0.32mA
-0.5
-1.0
-2.0
Volts
BVDGO
Drain-Gate Breakdown Voltage at IDGO = 0.08mA
912
Volts
Rth
Thermal Resistance
130
°C/W
ABSOLUTE MAXIMUM RATINGS (TA=25
°°°°C)
Symbol
Parameter
Rating
VDS
Drain-Source Voltage
7.0 V
VGS
Gate-Source Voltage
-3.0 V
IDS
Drain Current
IDSS
IGS
Gate Current
160
µA
Pin
RF Input Power, CW
14 dBm
PT
Continuous Dissipation
150 mW
TCH
Channel Temperature
175
°C
TSTG
Storage Temperature
- 65
°C to +175 °C
TYPICAL NOISE PARAMETERS (TA=25
°°°°C)
VDS = 2 V, IDS = 10 mA
Γopt
Frequency
(GHz)
NFopt
(dB)
GA
(dB)
MAG
ANG
Rn/50
2
0.33
18.4
1.00
15
0.42
4
0.35
16.8
0.86
32
0.36
6
0.37
15.2
0.70
53
0.28
8
0.40
13.8
0.53
79
0.20
10
0.46
12.5
0.39
112
0.12
12
0.52
11.5
0.29
153
0.09
14
0.61
11.0
0.26
202
0.08
16
0.77
10.9
0.32
262
0.11
18
0.95
10.6
0.51
332
0.24
PHOTO ENLARGEMENT


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