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ST3237EBPR Folha de dados(PDF) 7 Page - STMicroelectronics |
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ST3237EBPR Folha de dados(HTML) 7 Page - STMicroelectronics |
7 / 15 page ST3237E 7/15 TYPICAL PERFORMANCE CHARACTERISTICS (unless otherwise specified Tj = 25°C) Figure 3: LOW Level Receiver Output Current Figure 4: HIGH Level Receiver Output Current Figure 5: ESD Protection Note: The High ESD protected pins are the I/O RS232 line, transmitter out and receiver in. The other pins guarantee ± 2KV HBM ESD pro- tection versus ground by means of diodes. APPLICATION NOTE This application note describes the procedure for determining the susceptibility and the test method to verify ST ESD advanced protection on RS-232 or RS485 I/O device. Static electricity is defined as an electrical charge caused by an imbalance of electrons on the surface of a material. This imbalance of electrons produces an electric field that can be measured and that can influence other objects at a distance. Electrostatic discharge is defined as the transfer of charge between bodies at different electrical potentials. Electrostatic discharge (ESD) can change the electrical characteristics of a semiconductor device, degrading or destroying it. Any input or output port (I/O) allows access communication with other pieces of equipment by external connectors. These connectors are directly linked by the I/O pins of RS-232 or RS485 interface. ST provides the E-series by advanced high ESD protection structure. The protection functionality is tested in two different conditions: The first model is used to simulate the HUMAN BODY MODEL (HBM) event. A similar discharge can occur from a charged conductive object, such as a metallic tool or fixture. The model used to characterize this event is known as the Machine Model. A Human Body Model circuit and waveform is presented in Figures below. |
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