START405TR datasheet(2/7 Pages) STMICROELECTRONICS

Nome de Peças	START405TR

Descrição Electrónicos	NPN Silicon RF Transistor

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START405

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ELECTRICAL CHARACTERISTICS (Tj=25

oC,unless otherwise specified)

Note(1): Gms = | S21 / S12 |

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

Icbo

Collector cutoff current

Vcb =5V, Ie = 0A

150

nA

Iebo

Emitter-base cutoff

current

Veb = 1.5V, Ic = 0A

15

µA

Hfe

DC current gain

Ic = 5mA, Vce = 4V

160

NFmin

Minimim noise figure

Ic = 2mA, Vce = 2V, f = 1.8GHz

1.1

dB

Ga

NFmin associated gain

Ic = 2mA, Vce = 2V, f = 1.8GHz

19

dB

|S21|2

Insertion power gain

Ic = 5mA, Vce = 2V, f = 1.8GHz

17.4

dB

Gms (1)

Maximum stable gain

Ic = 5mA, Vce = 2V, f = 1.8GHz

24.2

dB

P-1dB

1dB compression point

Ic = 5mA,Vce = 2V, f = 1.8GHz

5

dBm

OIP3

Ouput third order

intercept point

Ic = 5mA,Vce = 2V, f = 1.8GHz

15

dBm

PINOUT

PIN CONNECTION

Pin No.

Description

1BASE

3

COLLECTOR

2,4

EMITTER

SOT343

4

12

3

Top view

Nº de peça semelhante - START405TR

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STMicroelectronics	START420	69Kb / 7P	NPN Silicon RF Transistor
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Descrição semelhante - START405TR

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