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STB7NB40 Folha de dados(PDF) 1 Page - STMicroelectronics |
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STB7NB40 Folha de dados(HTML) 1 Page - STMicroelectronics |
1 / 6 page STB7NB40 N - CHANNEL ENHANCEMENT MODE PowerMESH ™ MOSFET PRELIMINARY DATA s TYPICAL RDS(on) = 0.75 Ω s EXTREMELY HIGH dv/dt CAPABILITY s 100% AVALANCHE TESTED s VERY LOW INTRINSIC CAPACITANCES s GATE CHARGE MINIMIZED s FOR THROUGH-HOLE VERSION CONTACT SALES OFFICE DESCRIPTION Using the latest high voltage technology, SGS-Thomson has designed an advanced family of power Mosfets with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics. APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s SWITCH MODE POWER SUPPLIES (SMPS) s DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVE This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice. INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Uni t STB7NB40 VDS Drain-source Volt age (VGS =0) 400 V VDGR Drain- gate Voltage (RGS =20 k Ω) 400 V VGS Gat e-source Voltage ± 30 V ID Drain Current (continuous) at Tc =25 o C7 A ID Drain Current (continuous) at Tc =100 oC4.4 A IDM( •) Drain Current (pulsed) 28 A Ptot Tot al Dissipation at Tc =25 oC100 W Derating F act or 0.8 W/ oC dv/dt(1) Peak Diode Recovery voltage slope 4.5 V/ ns Tstg Storage T emperat ure -65 to 150 oC Tj Max. O perating Junction Temperature 150 oC ( •) Pulse width limited by safe operating area (1)ISD ≤ 7A, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS,Tj ≤ TJMAX October 1997 TYPE VDSS RDS(on) ID STB7NB40 400 V < 0.9 Ω 7.0 A 1 3 D 2PAK TO-263 (Suffix ”T4”) |
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