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STP20NE06 Folha de dados(PDF) 3 Page - STMicroelectronics |
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STP20NE06 Folha de dados(HTML) 3 Page - STMicroelectronics |
3 / 9 page ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON Symbo l Parameter Test Con ditions Min. Typ. Max. Unit td(on) tr Turn-on Delay T ime Rise Time VDD =30 V ID =10 A RG =4.7 Ω VGS =10 V (see t est circuit, f igure 3) 20 45 ns ns Qg Q gs Qgd Tot al G ate Charge Gat e-Source Charge Gat e-Drain Charge VDD =48 V ID =20 A VGS =10 V 25 10 6 35 nC nC nC SWITCHING OFF Symbo l Parameter Test Con ditions Min. Typ. Max. Unit tr(Voff) tf tc Off -volt age Rise T ime Fall T ime Cross-over Time VDD =48 V ID =20 A RG =4.7 Ω VGS =10 V (see t est circuit, f igure 5) 8 25 37 ns ns ns SOURCE DRAIN DIODE Symbo l Parameter Test Con ditions Min. Typ. Max. Unit ISD ISDM ( •) Source-drain Current Source-drain Current (pulsed) 20 80 A A VSD ( ∗)Forward On Voltage ISD =20 A VGS =0 1. 5 V trr Qrr IRRM Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 20 A di/ dt = 100 A/ µs VDD =30 V Tj = 150 oC (see t est circuit, f igure 5) 50 115 4.5 ns nC A ( ∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % ( •) Pulse width limited by safe operating area Safe Operating Area for TO-220 Safe Operating Area for TO-220FP STP20NE06/FP 3/9 |
Nº de peça semelhante - STP20NE06 |
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Descrição semelhante - STP20NE06 |
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