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FSB52006S Folha de dados(PDF) 1 Page - Fairchild Semiconductor |
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FSB52006S Folha de dados(HTML) 1 Page - Fairchild Semiconductor |
1 / 8 page ©2008 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FSB52006S Rev. A February 2008 FSB52006S Smart Power Module (SPM) Features •60V, RDS(ON).MAX=80mΩ @ 25°C 3-phase FRFET inverter including high voltage integrated circuit (HVIC) • 3 divided negative dc-link terminals for inverter current sens- ing applications • HVIC for gate driving and undervoltage protection • 3/5V CMOS/TTL compatible, active-high interface • Optimized for low electromagnetic interference • Isolation voltage rating of 1500Vrms for 1min. • Surface mounted device package • Moisture Sensitive Level 3 General Description FSB52006S is a tiny smart power module (SPM) based on FRFET technology as a compact inverter solution for small power motor drive applications such as fan motors and water suppliers. It is composed of 6 fast-recovery MOSFET (FRFET), and 3 half-bridge HVICs for FRFET gate driving. FSB52006S provides low electromagnetic interference (EMI) characteristics with optimized switching speed. Moreover, since it employs FRFET as a power switch, it has much better ruggedness and larger safe operation area (SOA) than that of an IGBT-based power module or one-chip solution. The package is optimized for the thermal performance and compactness for the use in the built-in motor application and any other application where the assembly space is concerned. FSB52006S is the most solution for the compact inverter providing the energy efficiency, compactness, and low electromagnetic interference. Absolute Maximum Ratings Symbol Parameter Conditions Rating Units VPN DC Link Input Voltage, Drain-source Voltage of each FRFET 60 V ID25 Each FRFET Drain Current, Continuous TC = 25°C 2.6 A ID100 Each FRFET Drain Current, Continuous TC = 100°C 1.3 A IDP Each FRFET Drain Current, Peak TC = 25°C, PW < 100μs 5 A PD Maximum Power Dissipation TC = 25°C, Each FRFET 11 W VCC Control Supply Voltage Applied between VCC and COM 20 V VBS High-side Bias Voltage Applied between VB(U)-VS(U), VB(V)-VS(V), VB(W)-VS(W) 20 V VIN Input Signal Voltage Applied between IN and COM -0.3 ~ VCC+0.3 V TJ Operating Junction Temperature -20 ~ 125 °C TSTG Storage Temperature -50 ~ 150 °C RθJC Junction to Case Thermal Resistance Each FRFET under inverter operating con- dition (Note 1) 9.2 °C/W VISO Isolation Voltage 60Hz, Sinusoidal, 1 minute, Connection pins to heatsink 1500 Vrms |
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