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FDG6322C Folha de dados(PDF) 1 Page - Fairchild Semiconductor |
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FDG6322C Folha de dados(HTML) 1 Page - Fairchild Semiconductor |
1 / 9 page June 2008 FDG6322C Dual N & P Channel Digital FET General Description Features Absolute Maximum Ratings T A = 25 oC unless other wise noted Symbol Parameter N-Channel P-Channel Units VDSS Drain-Source Voltage 25 -25 V V GSS Gate-Source Voltage 8 -8 V I D Drain Current - Continuous 0.22 -0.41 A - Pulsed 0.65 -1.2 P D Maximum Power Dissipation (Note 1) 0.3 W T J,TSTG Operating and Storage Temperature Range -55 to 150 °C ESD Electrostatic Discharge Rating MIL-STD-883D Human Body Model (100pf / 1500 Ohm) 6 kV THERMAL CHARACTERISTICS RθJA Thermal Resistance, Junction-to-Ambient (Note1) 415 °C/W FDG6322C Rev.F1 N-Ch 0.22 A, 25 V, R DS(ON) = 4.0 Ω @ VGS= 4.5 V, R DS(ON) = 5.0 Ω @ VGS= 2.7 V. P-Ch -0.41 A,-25V, R DS(ON) = 1.1 Ω @ VGS= -4.5V, R DS(ON) = 1.5 Ω @ VGS= -2.7V. Very small package outline SC70-6. Very low level gate drive requirements allowing direct operation in 3 V circuits (V GS(th) < 1.5 V). Gate-Source Zener for ESD ruggedness (>6kV Human Body Model). These dual N & P-Channel logic level enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. This device has been designed especially for low voltage applications as a replacement for bipolar digital transistors and small signal MOSFETs. Since bias resistors are not required, this dual digital FET can replace several different digital transistors, with different bias resistor values. SC70-6 SuperSOT TM-6 SOIC-14 SO-8 SOT-8 SOT-23 5 3 2 4 1 6 6 Q1 Q2 SC70-6 G1 D2 S1 D1 S2 G2 Mark: .22 pin 1 © 2008 Fairchild Semiconductor Corporation |
Nº de peça semelhante - FDG6322C |
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Descrição semelhante - FDG6322C |
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