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STP20NM50FD Folha de dados(PDF) 4 Page - STMicroelectronics

Nome de Peças STP20NM50FD
Descrição Electrónicos  N-channel 500 V, 0.22 廓, 20 A D2PAK, TO-220FP, TO-220 FDmesh??Power MOSFET
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Fabricante Electrônico  STMICROELECTRONICS [STMicroelectronics]
Página de início  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STP20NM50FD Folha de dados(HTML) 4 Page - STMicroelectronics

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Electrical characteristics
STB20NM50FD - STF20NM50FD - STP20NM50FD
4/16
2
Electrical characteristics
(TCASE=25°C unless otherwise specified)
Table 5.
On/off states
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
V(BR)DSS
Drain-source breakdown
voltage
ID = 250 µA, VGS= 0
500
V
IDSS
Zero gate voltage drain
current (VGS = 0)
VDS = Max rating,
VDS = Max rating,@125 °C
1
10
µA
µA
IGSS
Gate body leakage current
(VDS = 0)
VGS = ± 30 V
± 100
nA
VGS(th)
Gate threshold voltage
VDS= VGS, ID = 250 µA
34
5
V
RDS(on)
Static drain-source on
resistance
VGS= 10 V, ID= 10 A
0.22
0.25
Table 6.
Dynamic
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
gfs
(1)
1.
Pulsed: pulse duration = 300 µs, duty cycle 1.5%
Forward transconductance
VDS > ID(on) x RDS(on)max,
ID= 10 A
9S
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS = 25V, f =1 MHz,
VGS = 0
1380
290
40
pF
pF
pF
Coss eq.
(2)
2.
Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS
increases from 0 to 80% VDSS
Equivalent output
capacitance
VGS = 0, VDS = 0 to 400 V
130
pF
Rg
Gate input resistance
f=1 MHz Gate DC Bias=0
Test signal level=20 mV
open drain
2.8
Qg
Qgs
Qgd
Total gate charge
Gate-source charge
Gate-drain charge
VDD = 400 V, ID = 20 A
VGS = 10 V
(see Figure 16)
38
18
10
53
nC
nC
nC


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