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2SK1579 Folha de dados(PDF) 2 Page - Renesas Technology Corp

Nome de Peças 2SK1579
Descrição Electrónicos  Silicon N Channel MOS FET
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Fabricante Electrônico  RENESAS [Renesas Technology Corp]
Página de início  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

2SK1579 Folha de dados(HTML) 2 Page - Renesas Technology Corp

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2SK1579
Rev.2.00 Sep 07, 2005 page 2 of 5
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Ratings
Unit
Drain to source voltage
VDSS
12
V
Gate to source voltage
VGSS
±7
V
Drain current
ID
2
A
Drain peak current
ID(pulse)
*1
4
A
Body to drain diode reverse drain current
IDR
2
A
Channel power dissipation
Pch
*2
1
W
Channel temperature
Tch
150
°C
Storage temperature
Tstg
–55 to +150
°C
Notes: 1. PW
≤ 100 µs, duty cycle ≤ 10%
2. Value on the alumina ceramic board (12.5
× 20 × 0.7 mm)
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Drain to source cutoff current
IDSS
1
µA
VDS = 8 V, VGS = 0
Gate to source cutoff current
IGSS
±5
µA
VGS =
±6.5 V, VDS = 0
Gate to source cutoff voltage
VGS(off)
0.4
1.4
V
VDS = 5 V, ID = 100
µA
Drain to source on resistance (1)
RDS(on)1
0.36
0.7
VGS = 2.2 V, ID = 0.5 A
*3
Drain to source on resistance (2)
RDS(on)2
0.25
0.35
VGS = 4 V, ID = 1 A
*3
DC forward transfer admittance
|yfs|
1
2.5
S
VDS = 5 V, ID = 1 A,
∆VGS = 0.1 V *3
Input capacitance
Ciss
110
pF
Reverse transfer capacitance
Crss
30
pF
Output capacitance
Coss
150
pF
VDS = 5 V, VGS = 0,
f = 1 MHz
Turn-on time
t(on)
500
ns
Turn-off time
t(off)
1500
ns
ID = 0.2 A, VGS = 0,
Vin = 4 V, RL = 51
*3
Note:
3. Pulse Test


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