STW5NA90 datasheet(3/6 Pages) STMICROELECTRONICS

Nome de Peças	STW5NA90

Descrição Electrónicos	N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS

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ELECTRICAL CHARACTERISTICS (continued)

SWITCHING ON

Symb ol

Parameter

Test Cond ition s

Mi n.

Typ .

Max.

Un it

td(on)

tr

Turn-on Time

Rise Time

VDD =450 V

ID =

2. 5 A

RG =4.7

Ω

VGS =10 V

13

12

20

19

ns

(di/ dt )on

Turn-on Current Slope

VDD =720 V

ID =5 A

RG =47

Ω

VGS =10 V

250

A/

µs

Qg

Qgs

Qgd

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

VDD =720 V

ID =5 A

VGS =10 V

60

10

26

80

nC

SWITCHING OFF

Symb ol

Parameter

Test Cond ition s

Mi n.

Typ .

Max.

Un it

tr(Voff)

tf

tc

Of f-voltage Rise Time

Fall Time

Cross-over Time

VDD =720 V

ID =5A

RG =4.7

Ω

VGS =10 V

15

7

25

14

40

ns

SOURCE DRAIN DIODE

Symb ol

Parameter

Test Cond ition s

Mi n.

Typ .

Max.

Un it

ISD

ISDM (

•)

Source-drain Current

(pulsed)

5.3

21.3

A

VSD (

∗)

Forward On Voltage

ISD =5.3 A

VGS =0

1.6

V

trr

Qrr

IRRM

Reverse Recovery

Time

Reverse Recovery

Charge

Reverse Recovery

Current

ISD = 5 A

di/dt = 100 A/

µs

VDD =30 V

Tj =150

oC

1150

17. 3

30

ns

µC

A

(

∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %

(

•) Pulse width limited by safe operating area

STW5NA90-STH5NA90FI

3/6

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