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STY16NA90 Folha de dados(PDF) 2 Page - STMicroelectronics

Nome de Peças STY16NA90
Descrição Electrónicos  N - CHANNEL 900V - 0.5 ohm - 16A - Max247 EXTREMELY LOW GATE CHARGE POWER MOSFET
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Fabricante Electrônico  STMICROELECTRONICS [STMicroelectronics]
Página de início  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STY16NA90 Folha de dados(HTML) 2 Page - STMicroelectronics

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THERMAL DATA
Rthj-ca se
Rthj- amb
Rthc-si nk
Thermal Resistance Junction-case
Max
Thermal Resistance Junction-ambient
Max
Thermal Resistance Case-Heatsink
Typ
with Conduct ive Grease
0.42
40
0.05
oC/W
oC/W
AVALANCHE CHARACTERISTICS
Symb ol
Parameter
Max Valu e
Uni t
IAR
Avalanche Current, Repetitive or Not -Repet itive
(pulse width limited by Tj max)
16
A
EAS
Single Pulse Avalanche Energy
(starting Tj =25
oC, I
D =IAR ,VDD =50 V)
3000
mJ
ELECTRICAL CHARACTERISTICS (Tcase =25
oC unless otherwise specified)
OFF
Symb ol
Parameter
Test Cond ition s
Mi n.
Typ .
Max.
Un it
V(BR)DSS
Drain-source
Breakdown Volt age
ID =250
µAVGS =0
900
V
IDSS
Zero G ate Voltage
Drain Current (VGS =0)
VDS =Max Rating
VDS =Max Rating
Tc =125
oC
50
500
µA
µA
IGSS
Gate-body Leakage
Current (VDS =0)
VGS =
± 30 V
± 100
nA
ON (
∗)
Symb ol
Parameter
Test Cond ition s
Mi n.
Typ .
Max.
Un it
VGS(th)
Gate Threshold
Voltage
VDS =VGS
ID =250
µA
2.25
3
3.75
V
RDS(on)
St atic Drain-source On
Resistance
VGS =10 V
ID =8 A
0.5
0.54
Ω
Ω
ID(o n)
On St ate Drain Current
VDS >ID(on) xRDS(on)max
VGS =10 V
16
A
DYNAMIC
Symb ol
Parameter
Test Cond ition s
Mi n.
Typ .
Max.
Un it
gfs (
∗)Forward
Transconduct ance
VDS >ID(on) xRDS(on) max
ID =8 A
15
S
Ciss
Coss
Crss
Input Capacitance
Output Capacit ance
Reverse T ransfer
Capacitance
VDS =25 V
f = 1 MHz
VGS = 0
6400
600
150
8300
750
200
pF
pF
pF
STY16NA90
2/5


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