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IRFPC50LC Folha de dados(PDF) 1 Page - Vishay Siliconix |
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IRFPC50LC Folha de dados(HTML) 1 Page - Vishay Siliconix |
1 / 8 page Document Number: 91242 www.vishay.com S-Pending-Rev. A, 17-Jun-08 WORK-IN-PROGRESS 1 Power MOSFET IRFPC50LC, SiHFPC50LC Vishay Siliconix FEATURES • Ultra Low Gate Charge • Reduced Gate Drive Requirement • Enhanced 30 V VGS Rating • Reduced Ciss, Coss, Crss • Isolated Central Mounting Hole • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Lead (Pb)-free Available DESCRIPTION This new series of low charge Power MOSFETs achieve significantly lower gate charge over conventional MOSFETs. Utilizing advanced Power MOSFET technology the device improvements allow for reduced gate drive requirements, faster switching speeds and increased total system savings. These device improvements combined with the proven ruggedness and reliability of Power MOSFETs offer the designer a new standard in power transistors for switching applications. The TO-247 package is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220 devices. The TO-247 is similar but superior to the earlier TO-218 package because its isolated mounting hole. Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. VDD = 25 V, starting TJ = 25 °C, L = 13 mH, RG = 25 Ω, IAS = 11 A (see fig. 12). c. ISD ≤ 11 A, dI/dt ≤ 100 A/µs, VDD ≤ VDS, TJ ≤ 150 °C. d. 1.6 mm from case. PRODUCT SUMMARY VDS (V) 600 RDS(on) (Ω)VGS = 10 V 0.60 Qg (Max.) (nC) 84 Qgs (nC) 18 Qgd (nC) 36 Configuration Single N-Channel MOSFET G D S TO-247 G D S Available RoHS* COMPLIANT ORDERING INFORMATION Package TO-247 Lead (Pb)-free IRFPC50LCPbF SiHFPC50LC-E3 SnPb IRFPC50LC SiHFPC50LC ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage VDS 600 V Gate-Source Voltage VGS ± 30 Continuous Drain Current VGS at 10 V TC = 25 °C ID 11 A TC = 100 °C 7.3 Pulsed Drain Currenta IDM 44 Linear Derating Factor 1.5 W/°C Single Pulse Avalanche Energyb EAS 920 mJ Repetitive Avalanche Currenta IAR 11 A Repetitive Avalanche Energya EAR 19 mJ Maximum Power Dissipation TC = 25 °C PD 190 W Peak Diode Recovery dV/dtc dV/dt 3.0 V/ns Operating Junction and Storage Temperature Range TJ, Tstg - 55 to + 150 °C Soldering Recommendations (Peak Temperature) for 10 s 300d Mounting Torque 6-32 or M3 screw 10 lbf · in 1.1 N · m * Pb containing terminations are not RoHS compliant, exemptions may apply |
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