SI1555DL-T1 datasheet(3/8 Pages) VISHAY

Nome de Peças	SI1555DL-T1

Descrição Electrónicos	Complementary Low-Threshold MOSFET Pair

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Si1555DL

Vishay Siliconix

Document Number: 71079

S-50245—Rev. D, 21-Feb-05

www.vishay.com

3

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)

N−CHANNEL

0.0

0.2

0.4

0.6

0.8

1.0

0.0

0.5

1.0

1.5

2.0

2.5

0.0

0.2

0.4

0.6

0.8

1.0

0.0

0.5

1.0

1.5

2.0

2.5

3.0

VGS = 5 thru 2.5 V

TC = 125_C

−55_C

2 V

25_C

Output Characteristics

Transfer Characteristics

VDS − Drain-to-Source Voltage (V)

VGS − Gate-to-Source Voltage (V)

1.5 V

1 V

0

20

40

60

80

100

04

8

12

16

20

0.6

0.8

1.0

1.2

1.4

1.6

−50

−25

0

25

50

75

100

125

150

0

1

2

3

4

5

0.0

0.2

0.4

0.6

0.8

0.0

0.2

0.4

0.6

0.8

1.0

0.0

0.2

0.4

0.6

0.8

1.0

VDS − Drain-to-Source Voltage (V)

Crss

Coss

Ciss

VDS = 10 V

ID = 0.66 A

ID − Drain Current (A)

VGS = 4.5 V

ID = 0.66 A

VGS = 2.5 V

Gate Charge

On-Resistance vs. Drain Current

Qg − Total Gate Charge (nC)

Capacitance

On-Resistance vs. Junction Temperature

TJ − Junction Temperature (_C)

VGS = 4.5 V

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