Os motores de busca de Datasheet de Componentes eletrônicos |
|
SI1988DH-T1-E3 Folha de dados(PDF) 5 Page - Vishay Siliconix |
|
SI1988DH-T1-E3 Folha de dados(HTML) 5 Page - Vishay Siliconix |
5 / 7 page Document Number: 74296 S-62109-Rev. A, 23-Oct-06 www.vishay.com 5 Vishay Siliconix Si1988DH TYPICAL CHARACTERISTICS 25 °C, unless noted *The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissi- pation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Current Derating* 0.0 0.5 1.0 1.5 2.0 2.5 0 25 50 75 100 125 150 TC – Case Temperature (°C) Package Limited Power Derating 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 25 50 75 100 125 150 TC – Case Temperature (°C) Normalized Thermal Transient Impedance, Junction-to-Ambient 10-3 10-2 110 600 10-1 10-4 100 2 1 0.1 0.01 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.1 0.05 0.02 Single Pulse Duty Cycle = 0.5 Square Wave Pulse Duration (sec) 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 170 °C/W 3. TJM – TA = PDMZthJA(t) t1 t2 t1 t2 Notes: 4. Surface Mounted PDM |
Nº de peça semelhante - SI1988DH-T1-E3 |
|
Descrição semelhante - SI1988DH-T1-E3 |
|
|
Ligação URL |
Privacy Policy |
ALLDATASHEETPT.COM |
ALLDATASHEET é útil para você? [ DONATE ] |
Sobre Alldatasheet | Publicidade | Contato conosco | Privacy Policy | roca de Link | Lista de Fabricantes All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |