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Os motores de busca de Datasheet de Componentes eletrônicos |
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ST303CPBF Folha de dados(PDF) 2 Page - Vishay Siliconix |
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ST303CPBF Folha de dados(HTML) 2 Page - Vishay Siliconix |
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2 / 9 page  www.vishay.com For technical questions, contact: ind-modules@vishay.com Document Number: 94373 2 Revision: 25-Jul-08 ST303CPbF Series Vishay High Power Products Inverter Grade Thyristors (PUK Version), 620 A CURRENT CARRYING CAPABILITY FREQUENCY UNITS 50 Hz 1314 1130 2070 1940 6930 6270 A 400 Hz 1260 1040 2190 1880 3440 2960 1000 Hz 900 700 1900 1590 1850 1540 2500 Hz 340 230 910 710 740 560 Recovery voltage Vr 50 50 50 V Voltage before turn-on Vd VDRM VDRM VDRM Rise of on-state current dI/dt 50 - - A/µs Heatsink temperature 40 55 40 55 40 55 °C Equivalent values for RC circuit 10/0.47 10/0.47 10/0.47 Ω/µF ON-STATE CONDUCTION PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum average on-state current at heatsink temperature IT(AV) 180° conduction, half sine wave double side (single side) cooled 620 (230) A 55 (85) °C Maximum RMS on-state current IT(RMS) DC at 25 °C heatsink temperature double side cooled 1180 A Maximum peak, one half cycle, non-repetitive surge current ITSM t = 10 ms No voltage reapplied Sinusoidal half wave, initial TJ = TJ maximum 7950 t = 8.3 ms 8320 t = 10 ms 100 % VRRM reapplied 6690 t = 8.3 ms 7000 Maximum I2t for fusing I2t t = 10 ms No voltage reapplied 316 kA2s t = 8.3 ms 289 t = 10 ms 100 % VRRM reapplied 224 t = 8.3 ms 204 Maximum I2 √t for fusing I2 √t t = 0.1 to 10 ms, no voltage reapplied 3160 klA2 √s Maximum peak on-state voltage VTM ITM = 1255 A, TJ = TJ maximum, tp = 10 ms sine wave pulse 2.16 V Low level value of threshold voltage VT(TO)1 (16.7 % x π x I T(AV) < I < π x IT(AV)), TJ = TJ maximum 1.44 High level value of threshold voltage VT(TO)2 (I > π x I T(AV)), TJ = TJ maximum 1.48 Low level value of forward slope resistance rt1 (16.7 % x π x I T(AV) < I < π x IT(AV)), TJ = TJ maximum 0.57 m Ω High level value of forward slope resistance rt2 (I > π x I T(AV)), TJ = TJ maximum 0.56 Maximum holding current IH TJ = 25 °C, IT > 30 A 600 mA Typical latching current IL TJ = 25 °C, VA = 12 V, Ra = 6 Ω, IG = 1 A 1000 180° el I TM 180° el I TM 100 µs I TM |
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