TC1014-2.7VCT datasheet(2/10 Pages) TELCOM

Nome de Peças	TC1014-2.7VCT

Descrição Electrónicos	50mA CMOS LDO WITH SHUTDOWN AND REFERENCE BYPASS

Download	10 Pages

Scroll/Zoom	100%

Fabricante Electrônico	TELCOM [TelCom Semiconductor, Inc]

Página de início	http://www.telcom-semi.com

Logo

2 / 10 page

TC1014

2

50mA CMOS LDO WITH SHUTDOWN

AND REFERENCE BYPASS

PRELIMINARY INFORMATION

TC1014-01-6/5/97

ABSOLUTE MAXIMUM RATINGS*

Input Voltage ................................................................. 7V

Output Voltage .................................. (– 0.3) to (VIN + 0.3)

Power Dissipation .................... Internally Limited (Note 7)

Operating Temperature .................... – 40

°C < TJ < 125°C

Storage Temperature ............................ – 65

°C to +150°C

Maximum Voltage On Any Pin .......... VIN + 0.3V to – 0.3V

*Stresses beyond those listed under "Absolute Maximum Ratings" may

cause permanent damage to the device. These are stress ratings only, and

functional operation of the device at these or any other conditions beyond

those indicated in the operational sections of the specifications is not

implied. Exposure to absolute maximum rating conditions for extended

periods may affect device reliability.

ELECTRICAL CHARACTERISTICS: VIN = VOUT + 1V, IL = 100µA, CL = 3.3µF, SHDN > VIH, TA = 25

°C, unless otherwise noted.

Boldface type specifications apply for junction temperatures of – 40

°C to +125°C.

Symbol

Parameter

Test Conditions

Min

Typ

Max

Units

VIN

Input Operating Voltage

—

6.5

V

IOUTMAX

Maximum Output Current

50

——

mA

VOUT

Output Voltage

Note 1

VR – 2.5%

VR ±0.5%

VR + 2.5%

V

TCVOUT

VOUT Temperature Coefficient

Note 2

20

—

ppm/

°C

40

∆VOUT/∆VIN

Line Regulation

(VR + 1V) < VIN < 6V

—

0.01

—

%

∆VOUT/VOUT

Load Regulation

IL = 1.0mA to IOUTMAX

—

0.5

—

%

(Note 3)

VIN – VOUT

Dropout Voltage (Note 4)

IL = 100µA—

5

—

mV

IL = 20mA

65

IL = 50mA

95

(Note 4)

IGND

Ground Pin Current

IL = IOUTMAX, (Note 5)

——

0

µA

IIN

Supply Current

SHDN = VIH, IL = 0

—

50

—

µA

IINSD

Shutdown Supply Current

SHDN = 0V

—

0.05

µA

PSRR

Power Supply Rejection Ratio

FRE ≤ 1kHz

—

64

—

dB

IOUTSC

Output Short Circuit Current

VOUT = 0V

—

200

400

mA

∆VOUT/∆PD

Thermal Regulation

Note 6

—

0.04

—

%/W

eN

Output Noise

IL = IOUTMAX

—

260

—

nV/

√Hz

470pF from Bypass to GND

SHDN Input

VIH

SHDN Input High Threshold

VIN = 2.5V to 6.5V

45

—

%VIN

VIL

SHDN Input Low Threshold

VIN = 2.5V to 6.5V

—

15

%VIN

NOTES: 1. VR is the regulator output voltage setting. VR = 2.5V, 2.7V, 3.0V, 3.3V, 5.0V.

2. TCVOUT = (VOUTMAX – VOUTMIN) x 10

6

VOUT x ∆T

3. Regulation is measured at a constant junction temperature using low duty cycle pulse testing. Load regulation is tested over a load

range from 1.0mA to the maximum specified output current. Changes in output voltage due to heating effects are covered by the

thermal regulation specification.

4. Dropout voltage is defined as the input to output differential at which the output voltage drops 2% below its nominal value at a 1V

differential.

5. Ground pin current is the regulator pass transistor gate current. The total current drawn from the input supply is the sum of the load

current, ground current and supply current (i.e. IIN = ISUPPLY + IGND + ILOAD).

6. Thermal Regulation is defined as the change in output voltage at a time T after a change in power dissipation is applied, excluding load

or line regulation effects. Specifications are for a current pulse equal to ILMAX at VIN = 6V for T = 10msec.

7. The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction temperature and the

thermal resistance from junction-to-air (i.e. TA, TJ, θJA). Exceeding the maximum allowable power dissipation causes the device to

initiate thermal shutdown. Please see

Thermal Considerations section of this data sheet for more details.

.

Nº de peça semelhante - TC1014-2.7VCT

Fabricante Electrônico	Nome de Peças	Folha de dados	Descrição Electrónicos
Microchip Technology	TC1014-2.7VCT713	705Kb / 22P	50 mA, 100 mA and 150 mA CMOS LDOs with Shutdown and Reference Bypass 2007

More results

Descrição semelhante - TC1014-2.7VCT

Fabricante Electrônico	Nome de Peças	Folha de dados	Descrição Electrónicos
Unisonic Technologies	LR1185	172Kb / 4P	150mA CMOS LDO WITH SHUTDOWN AND REFERENCE BYPASS
Unisonic Technologies	LR1185	163Kb / 4P	150mA CMOS LDO WITH SHUTDOWN AND REFERENCE BYPASS
Microchip Technology	TC1014	558Kb / 20P	50mA, 100mA and 150mA CMOS LDOs with Shutdown and Reference Bypass 2002
TelCom Semiconductor, I...	TC1072	126Kb / 12P	50mA CMOS LDO WITH SHUTDOWN, ERROR OUTPUT AND VREF BYPASS
	TC1070	117Kb / 12P	50mA ADJUSTABLE CMOS LDO WITH SHUTDOWN
	TC1054	123Kb / 12P	50mA CMOS LDO WITH SHUTDOWN AND ERROR OUTPUT
Microchip Technology	TC1174	444Kb / 12P	300mA CMOS LDO with Shutdown and VREF Bypass 2002
	TC1174	211Kb / 14P	300mA CMOS LDO with Shutdown and VREF Bypass 10/26/12
	TC1107-3.3VUA	433Kb / 12P	300mA CMOS LDO with Shutdown and VREF Bypass 05/01/02
	TC1107	443Kb / 12P	300mA CMOS LDO with Shutdown and VREF Bypass 2002

More results

TC1014-2.7VCT Folha de dados(PDF) 2 Page - TelCom Semiconductor, Inc

TC1014-2.7VCT Folha de dados(HTML) 2 Page - TelCom Semiconductor, Inc

Nº de peça semelhante - TC1014-2.7VCT

Descrição semelhante - TC1014-2.7VCT

Html Pages

1 2 3 4 5 6 7 8 9 10

Folha de dados Download

Ligação URL