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2SD780 Folha de dados(PDF) 1 Page - Guangdong Kexin Industrial Co.,Ltd

Nome de Peças 2SD780
Descrição Electrónicos  NPN Silicon Epitaxia
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Fabricante Electrônico  KEXIN [Guangdong Kexin Industrial Co.,Ltd]
Página de início  http://www.kexin.com.cn/index.asp
Logo KEXIN - Guangdong Kexin Industrial Co.,Ltd

2SD780 Folha de dados(HTML) 1 Page - Guangdong Kexin Industrial Co.,Ltd

  2SD780 Datasheet HTML 1Page - Guangdong Kexin Industrial Co.,Ltd  
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background image
SMD Type
IC
www.kexin.com.cn
1
SMD Type
Transistors
0.4+0.1
-0.1
2.9+0.1
-0.1
0.95+0.1
-0.1
1.9+0.1
-0.1
1.Base
2.Emitter
3.collector
12
3
Unit: mm
SOT-23
0.1+0.05
-0.01
NPN Silicon Epitaxia
2SD780
Features
Micro package.
High DC current gain. hFE: 200TYP.(VCE=1.0V,IC=50mA).
hFE Classification
Marking
DW1
DW2
DW3
DW4
DW5
hFE
110
180
135
220
170
270
200
320
250
400
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Collector-base voltage
VCBO
60
V
Collector-emitter voltage
VCEO
60
V
Emitter-base voltage
VEBO
5.0
V
Collector current
IC
300
mA
Total power dissipation at 25
ambient temperature
PT
200
mW
Junction temperature
Tj
150
Storage temperature
Tstg
-55to+150
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
Min
Typ
Max
Unit
Collector cutoff current
ICBO
VCB =50V, IE = 0
100
nA
Emitter cutoff current
IEBO
VEB =5.0 V, IC = 0
100
nA
DC current gain *
hFE
VCE =1.0 V, IC = 50 mA
110
200
400
Base to emitter voltage *
VBE
VCE =6.0 V, IC = 10 mA
600
645
700
mV
Collector saturation voltage *
VCE(sat) IC = 300 mA, IB = 30 mA
0.15
0.6
V
Output capacitance
Cob
VCB =6.0 V, IE = 0 , f = 1.0 MHz
7.0
pF
Gain bandwidth product
fT
VCE =6.0 V, IE = -10 mA
140
MHz
* Pulsed: PW
350 ìs, duty cycle
2%


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