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2SK1273 Folha de dados(PDF) 1 Page - Guangdong Kexin Industrial Co.,Ltd |
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2SK1273 Folha de dados(HTML) 1 Page - Guangdong Kexin Industrial Co.,Ltd |
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1 / 1 page SMD Type MOSFET 1 www.kexin.com.cn 1.80+0.1 -0.1 4.50+0.1 -0.1 0.53+0.1 -0.1 0.48+0.1 -0.1 1.50+0.1 -0.1 0.44+0.1 -0.1 3.00+0.1 -0.1 SOT-89 Unit: mm 1. Base 2. Collector 3. Emiitter 1. Source 2. Drain 3. Gate 1 2 3 1Gate 2Drain 3Source MOS Field Effect Transistor 2SK1273 Features Directly driver by Ics having a 5V power source. Has low on-satate resistance RDS(on)=1.00 MAX.@VGS=4.0V,ID=0.5A RDS(on)=0.65 MAX.@VGS=10V,ID=0.5A Not necessary to consider driving current because of its high input impedance. Possible to reduce the number of parts by omitting the biasresistor. Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain to source voltage VDSS 60 V Gate to source voltage VGSS 20 V Drain current (DC) ID 2.0 A Drain current(pulse) * ID 4.0 A Power dissipation PD 2.0 W Channel temperature Tch 150 Storage temperature Tstg -55to+150 *PW 10ms, duty cycle 50% Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Drain cut-off current IDSS VDS=60V,VGS=0 10 A Gate leakage current IGSS VGS= 20V,VDS=0 10 A Gate to source cutoff voltage VGS(off) VDS=10V,ID=1mA 1.0 1.7 2.5 V Forward transfer admittance Yfs VDS=10V,ID=0.5A 0.4 s VGS=4.0V,ID=0.5A 0.31 1.00 VGS=10V,ID=0.5A 0.24 0.65 Input capacitance Ciss 220 pF Output capacitance Coss 105 pF Reverse transfer capacitance Crss 16 pF Turn-on delay time td(on) 15 ns Rise time tr 35 ns Turn-off delay time td(off) 380 ns Fall time tf 120 ns VDS=10V,VGS=0,f=1MHZ ID=0.5A,VGS(on)=10V,RL=50 ,VDD=25V,RG=10 Drain to source on-state resistance RDS(on) Marking Marking NA |
Nº de peça semelhante - 2SK1273 |
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Descrição semelhante - 2SK1273 |
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