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J105 Folha de dados(PDF) 4 Page - Vishay Siliconix |
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J105 Folha de dados(HTML) 4 Page - Vishay Siliconix |
4 / 5 page J105/106/107 Vishay Siliconix www.vishay.com 7-4 Document Number: 70230 S-04028—Rev. D, 04-Jun-01 TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED) 200 100 10 1 1 10 100 20 10 1 0.1 1 10 100 10 100 1 k 100 k 10 k 300 0 –6 260 180 140 100 –8 –10 –4 –2 30 24 12 6 0 012 16 8 420 100 10 1 150 0 –12 –16 –8 –4 –20 120 90 60 30 0 Capacitance vs. Gate-Source Voltage Transconductance vs. Drain Current Forward Transconductance and Output Conductance vs. Gate-Source Cutoff Voltage Gate Leakage Current Output Conductance vs. Drain Current Noise Voltage vs. Frequency VGS – Gate-Source Voltage (V) ID – Drain Current (mA) ID – Drain Current (mA) f – Frequency (Hz) VGS(off) – Gate-Source Cutoff Voltage (V) VDG – Drain-Gate Voltage (V) VDS = 0 V f = 1 MHz Ciss Crss VDG = 10 V ID = 10 mA gfs and gos @ VDS = 10 V VGS = 0 V, f = 1 kHz gfs gos IGSS @ 125 _C IGSS @ 25 _C TA = 125_C TA = 25_C 100 mA 100 mA 25 mA 1 pA 100 pA 10 pA 100 nA 1 nA 10 nA VDS = 10 V f = 1 kHz TA = –55_C 125 _C TA = –55_C 125 _C 220 18 25 mA 25 _C VGS(off) = –5 V VDS = 10 V f = 1 kHz VGS(off) = –5 V 25 _C |
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