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BU2515AF Folha de dados(PDF) 2 Page - Inchange Semiconductor Company Limited |
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BU2515AF Folha de dados(HTML) 2 Page - Inchange Semiconductor Company Limited |
2 / 2 page INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BU2515AF ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 100mA; IB= 0,L= 25mH 800 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA; IC= 0 7.5 V VCE(sat) Collector-Emitter Saturation Voltage IC= 4.5A; IB= 0.9A 5.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 4.5A; IB= 0.9A 1.0 V ICES Collector Cutoff Current VCE= BVCES; VBE= 0 VCE= BVCES; VBE= 0; TC=125℃ 1.0 2.0 mA IEBO Emitter Cutoff Current VEB= 7.5V ; IC= 0 1.0 mA hFE-1 DC Current Gain IC= 0.5A ; VCE= 5V 17.2 hFE-2 DC Current Gain IC= 4.5A ; VCE= 5V 5 10.8 isc Website:www.iscsemi.cn 2 |
Nº de peça semelhante - BU2515AF |
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Descrição semelhante - BU2515AF |
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