MJE801 datasheet(2/3 Pages) SAVANTIC

Nome de Peças	MJE801

Descrição Electrónicos	Silicon NPN Power Transistors

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Fabricante Electrônico	SAVANTIC [Savantic, Inc.]

Página de início	http://www.svntc.com

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2 / 3 page

SavantIC Semiconductor

Product Specification

2

Silicon NPN Power Transistors

MJE800/801/802/803

CHARACTERISTICS

Tj=25

unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP.

MAX

UNIT

MJE800/801

60

V(BR)CEO

Collector-emitter

breakdown voltage

MJE802/803

IC=50mA;IB=0

80

V

MJE800/802

IC=1.5A ;IB=30mA

2.5

VCE(sat)-1

Collector-emitter

saturation voltage

MJE801/803

IC=2A ;IB=40mA

2.8

V

VCE(sat)-2

Collector-emitter saturation voltage

IC=4A ;IB=40mA

3.0

V

MJE800/802

IC=1.5A ; VCE=3V

VBE-1

Base-emitter

on voltage

MJE801/803

IC=2A ; VCE=3V

2.5

V

VBE-2

Base-emitter

on voltage

IC=4A ; VCE=3V

3.0

V

MJE800/801

VCE=60V; IB=0

ICEO

Collector

cut-off current

MJE802/803

VCE=80V; IB=0

100

µA

ICBO

Collector cut-off current

VCB=Rated BVCEO; IE=0

TC=100

100

500

µA

IEBO

Emitter cut-off current

VEB=5V; IC=0

2

mA

MJE800/802

IC=1.5A ; VCE=3V

hFE-1

DC current gain

MJE801/803

IC=2A ; VCE=3V

750

hFE-2

DC current gain

IC=4A ; VCE=3V

100

Nº de peça semelhante - MJE801

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