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2SC1170 Folha de dados(PDF) 2 Page - Savantic, Inc. |
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2SC1170 Folha de dados(HTML) 2 Page - Savantic, Inc. |
2 / 3 page SavantIC Semiconductor Product Specification 2 Silicon NPN Power Transistors 2SC1170 CHARACTERISTICS Tj=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage IC=100mA ;IB=0 500 V VCEsat Collector-emitter saturation voltage IC=2.5A; IB=0.6A 10 V VBEsat Base-emitter saturation voltage IC=2.5A; IB=0.6A 1.2 V ICES Collector cut-off current VCE=1200V; VBE=0 1.0 mA ICBO Collector cut-off current VCB=800V; IE=0 20 µA IEBO Emitter cut-off current VEB=5V; IC=0 20 µA hFE-1 DC current gain IC=0.5A ; VCE=10V 10 hFE-2 DC current gain IC=3A ; VCE=10V 5 fT Transition frequency IC=0.5A ; VCE=10V 4 MHz |
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Descrição semelhante - 2SC1170 |
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