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2SC2001 Folha de dados(PDF) 1 Page - Dc Components |
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2SC2001 Folha de dados(HTML) 1 Page - Dc Components |
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1 / 1 page 2SC2001 DISCRETE SEMICONDUCTORS R DC COMPONENTS CO., LTD. TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR Description Designed for general purpose applications. Pinning 1 = Emitter 2 = Collector 3 = Base TO-92 Dimensions in inches and (millimeters) .022(0.56) .014(0.36) .050 (1.27) .148(3.76) .132(3.36) Typ .190(4.83) .170(4.33) .100 (2.54) Typ .050 (1.27) Typ .022(0.56) .014(0.36) .190(4.83) .170(4.33) .500 (12.70) Min 2oTyp 5oTyp. 2oTyp 3 2 1 5oTyp. Characteristic Symbol Rating Unit Collector-Base Voltage VCBO 30 V Collector-Emitter Voltage VCEO 25 V Emitter-Base Voltage VEBO 5 V Collector Current IC 700 mA Total Power Dissipation PD 600 mW Junction Temperature TJ +150 o C Storage Temperature TSTG -55 to +150 o C Absolute Maximum Ratings(TA=25oC) Rank M L K Range 90~180 135~270 200~400 Classification of hFE1 Characteristic Symbol Min Typ Max Unit Test Conditions Collector-Base Breakdown Volatge BVCBO 30 - - V IC=100 µA, IE=0 Collector-Emitter Breakdown Voltage BVCEO 25 - - V IC=2mA, IB=0 Emitter-Base Breakdown Volatge BVEBO 5 - - V IE=100 µA, IC=0 Collector Cutoff Current ICBO - - 0.1 µA VCB=30V, IE=0 Emitter Cutoff Current IEBO - - 0.1 µA VEB=5V, IC=0 Collector-Emitter Saturation Voltage(1) VCE(sat) - - 0.6 V IC=700mA, IB=70mA Base-Emitter Saturation Voltage(1) VBE(sat) - - 1.2 V IC=700mA, IB=70mA DC Current Gain(1) hFE1 90 - 400 - IC=100mA, VCE=1V hFE2 50 - - - IC=700mA, VCE=1V Transition Frequency fT 50 - - MHz IC=10mA, VCE=6V Output Capacitance Cob - - 25 pF VCB=6V, f=1MHz, IE=0 Electrical Characteristics (Ratings at 25oC ambient temperature unless otherwise specified) (1)Pulse Test: Pulse Width 380 µs, Duty Cycle 2% |
Nº de peça semelhante - 2SC2001 |
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Descrição semelhante - 2SC2001 |
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