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2SC2120 Folha de dados(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH

Nome de Peças 2SC2120
Descrição Electrónicos  NPN Type Plastic Encapsulate Transistors
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Fabricante Electrônico  SECOS [SeCoS Halbleitertechnologie GmbH]
Página de início  http://www.secosgmbh.com
Logo SECOS - SeCoS Halbleitertechnologie GmbH

2SC2120 Folha de dados(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH

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Any changing of specification will not be informed individual
2S
C2120
http://www.SeCoSGmbH.com
Elektronische Bauelemente
FEATURES
MAXIMUM RATINGS* TA=25℃ unless otherwise noted
Symbol
Parameter
Value
Units
VCBO
Collector-Base Voltage
35
IC
Collector Current -Continuous
0.8
A
PCM
Power Dissipation
0.6
W
TJ, Tstg
Junction and Storage Temperature
-55-150
V
1 2
TO-92
1. EMITTER
2. COLLECTOR
.
BASE
1
2
3
3
3
01-Jun-2002 Rev. A
Page 1 of 2
NPN Type
Plastic Encapsulate Transistors
Parameter
Symbol
Test
conditions
MIN
TYP
MAX
UNIT
Collector-base breakdown voltage
V(BR)CBO
Ic= 0.1mA , IE=0
V
Collector-emitter breakdown voltage
V(BR)CEO
IC= 10 mA , IB=0
30
V
Emitter-base breakdown voltage
V(BR)EBO
IE=0.1mA, IC=0
5
V
Collector cut-off current
ICBO
VCB= 35V , IE=0
0.1
µA
Collector cut-off current
ICEO
VCE= 25V , IB=0
0.1
µA
Emitter cut-off current
IEBO
VEB= 5 V,
IC=0
0.1
µA
DC current gain
hFE
VCE=1 V, IC= 100mA
100
Collector-emitter saturation voltage
VCE(sat)
IC= 500 mA, IB= 20 mA
0.5
V
Base-emitter voltage
VBE
VCE= 1V, IC= 10mA
0.8
V
Transition frequency
f T
VCE= 5 V, IC= 10mA
100
MHz
CLASSIFICATION OF hFE
Rank
O
Y
Range
100-200
160-320
35
320
ELECTRICAL CHARACTERISTICS(Tamb=25℃
unless otherwise specified)
RoHS Compliant Product
A suffix of "-C" specifies halogen & lead-free


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