LS133 datasheet(1/1 Pages) SEMTECH_ELEC

Nome de Peças	LS133

Descrição Electrónicos	SILICON EPITAXIAL PLANAR DIODE

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Fabricante Electrônico	SEMTECH_ELEC [SEMTECH ELECTRONICS LTD.]

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Dated :12/01/2007

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SEMTECH ELECTRONICS LTD.

(Subsidiary of Sino-Tech International Holdings Limited, a company

listed on the Hong Kong Stock Exchange, Stock Code: 724)

LS133

SILICON EPITAXIAL PLANAR DIODE

High speed switching diode

Features

• Glass sealed envelope

• High speed

• High reliability

Absolute Maximum Ratings (Ta = 25 OC)

Parameter

Symbol

Value

Unit

Peak Reverse Voltage

VRM

90

V

DC Reverse Voltage

VR

80

V

Mean Rectifying Current

Io

130

mA

Peak Forward Current

IFM

400

mA

Surge Current (1s)

Isurge

600

mA

Power Dissipation

Ptot

300

mW

Junction Temperature

Tj

175

O

C

Storage Temperature Range

Ts

- 65 to + 175

O

C

Characteristics at Ta = 25 OC

Parameter

Symbol

Max.

Unit

Forward Voltage

at IF = 100 mA

VF

1.2

V

Reverse Current

at VR = 80 V

IR

0.5

µA

Capacitance Between Terminals

at VR = 0.5 V, f = 1 MHz

CT

2

pF

Reverse Recovery Time

at VR = 6 V, IF = 10 mA, RL = 50 Ω

trr

4

ns

LS-34

QuadroMELF

Dimensions in mm

Nº de peça semelhante - LS133

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Frontier Electronics.	LS13-LFR	168Kb / 2P	1A SURFACE MOUNT LOW FORWARD VOLTAGE SCHOTTKY BARRIER RECTIFIERS
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Power-One	LS1301-7R	66Kb / 4P	100 Watt AC-DC Converters
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Descrição semelhante - LS133

Fabricante Electrônico	Nome de Peças	Folha de dados	Descrição Electrónicos
Semtech Corporation	1N4148M	133Kb / 2P	SILICON EPITAXIAL PLANAR DIODE?
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Galaxy Semi-Conductor H...	1SS380_0711	89Kb / 2P	Silicon Epitaxial Planar Diode
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