1

Motorola Small–Signal Transistors, FETs and Diodes Device Data

Switching Transistors

NPN Silicon

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Collector – Emitter Voltage

VCEO

15

Vdc

Collector – Emitter Voltage

VCES

40

Vdc

Collector– Base Voltage

VCBO

40

Vdc

Emitter– Base Voltage

VEBO

4.5

Vdc

Collector Current (10

ms pulse)

IC(Peak)

500

mA

Collector Current — Continuous

IC

200

mA

Total Device Dissipation @ TA = 25°C

Derate above 25

°C

PD

0.36

2.06

Watt

mW/

°C

Total Device Dissipation @ TC = 100°C

Derate above 100

°C

PD

0.68

6.85

Watts

mW/

°C

Operating and Storage Junction

Temperature Range

TJ, Tstg

– 65 to +200

°C

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Thermal Resistance, Junction to Ambient

RqJA

486

°C/W

Thermal Resistance, Junction to Case

RqJC

147

°C/W

Characteristic

Symbol

Min

Max

Unit

OFF CHARACTERISTICS

Collector – Emitter Breakdown Voltage (IC = 10 mA, VBE = 0)

V(BR)CES

40

—

Vdc

Collector – Emitter Sustaining Voltage(1) (IC = 10 mAdc, IB = 0)

VCEO(sus)

15

—

Vdc

Collector – Base Breakdown Voltage (IC = 10 mA, IB = 0)

V(BR)CBO

40

—

Vdc

Emitter – Base Breakdown Voltage (IE = 10 mAdc, IC = 0)

V(BR)EBO

4.5

—

Vdc

Collector Cutoff Current

(VCB = 20 Vdc, IE = 0)

2N2369

(VCB = 20 Vdc, IE = 0, TA = 150°C)

2N2369A

ICBO

—

—

0.4

30

mAdc

Collector Cutoff Current

(VCE = 20 Vdc, VBE = 0)

2N2369A

ICES

—

0.4

mAdc

Base Current

(VCE = 20 Vdc, VBE = 0)

2N2369A

IB

—

0.4

mAdc

1. Pulse Test: Pulse Width

v 300 ms, Duty Cycle v 2.0%.

Preferred devices are Motorola recommended choices for future use and best overall value.

Order this document

by 2N2369/D

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

2N2369

2N2369A

*Motorola Preferred Device

CASE 22–03, STYLE 1

TO–18 (TO–206AA)

1

2

3

*

COLLECTOR

3

2

BASE

1

EMITTER