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SB1100-0.9 Folha de dados(PDF) 1 Page - Gunter Seniconductor GmbH. |
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SB1100-0.9 Folha de dados(HTML) 1 Page - Gunter Seniconductor GmbH. |
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1 / 1 page SB 1XX - 0.9 Chips for Schottky Diodes Chip Specification General Description: Schottky Diode chips with Mo-barrier for switch mode power rectifiers with the following features: * Guard-ring for stress protection * Extremely low forward voltage * 125 ℃ ℃ ℃ ℃ operation junction temperature * reverse avalanche behavior Mechanical Data: SB 1XX passivated Silicon Chip Demension(mm) 0.9x0.9 Thickness: 350 +- 20 µm Metallization: Top ( Anode ) : Al Ag Bottom ( Cathode) : TiNiAg Forward Current(A) 1 A Reverse Voltage (V):23, 43, 100 V Type Chip VR(V) VF(V)@25 C IRM@VRMM size(mm) at If=1A at 25 C SB120 0.9x0.9 23V 400mV 0,5mA SB140 0.9x0.9 43 V 500mV 0,5mA SB1100 0.9x0.9 100 V 730mV 0,5mA Note: Other voltages, Vf & Top Metal AL are available |
Nº de peça semelhante - SB1100-0.9 |
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Descrição semelhante - SB1100-0.9 |
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