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STK14C88-3 Folha de dados(PDF) 4 Page - Cypress Semiconductor

Nome de Peças STK14C88-3
Descrição Electrónicos  256 Kbit (32K x 8) AutoStore nvSRAM
Download  17 Pages
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Fabricante Electrônico  CYPRESS [Cypress Semiconductor]
Página de início  http://www.cypress.com
Logo CYPRESS - Cypress Semiconductor

STK14C88-3 Folha de dados(HTML) 4 Page - Cypress Semiconductor

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STK14C88-3
Document Number: 001-50592 Rev. **
Page 4 of 17
Hardware STORE (HSB) Operation
The STK14C88-3 provides the HSB pin for controlling and
acknowledging the STORE operations. The HSB pin is used
to request a hardware STORE cycle. When the HSB pin is
driven LOW, the STK14C88-3 conditionally initiates a STORE
operation after tDELAY. An actual STORE cycle only begins if a
WRITE to the SRAM takes place since the last STORE or
RECALL cycle. The HSB pin also acts as an open drain driver
that is internally driven LOW to indicate a busy condition, while
the STORE (initiated by any means) is in progress. Pull up this
pin with an external 10K ohm resistor to VCAP if HSB is used
as a driver.
SRAM READ and WRITE operations, that are in progress
when HSB is driven LOW by any means, are given time to
complete before the STORE operation is initiated. After HSB
goes LOW, the STK14C88-3 continues SRAM operations for
tDELAY. During tDELAY, multiple SRAM READ operations take
place. If a WRITE is in progress when HSB is pulled LOW, it
allows a time, tDELAY to complete. However, any SRAM
WRITE cycles requested after HSB goes LOW are inhibited
until HSB returns HIGH.
The HSB pin is used to synchronize multiple STK14C88-3
while using a single larger capacitor. To operate in this mode,
the HSB pin is connected together to the HSB pins from the
other STK14C88-3. An external pull up resistor to VCAP is
required, since HSB acts as an open drain pull down. The
VCAP pins from the other STK14C88-3 parts are tied together
and share a single capacitor. The capacitor size is scaled by
the number of devices connected to it. When any one of the
STK14C88-3 detects a power loss and asserts HSB, the
common HSB pin causes all parts to request a STORE cycle.
(A STORE takes place in those STK14C88-3 that are written
since the last nonvolatile cycle.)
During any STORE operation, regardless of how it is initiated,
the STK14C88-3 continues to drive the HSB pin LOW,
releasing it only when the STORE is complete. After
completing the STORE operation, the STK14C88-3 remains
disabled until the HSB pin returns HIGH.
If HSB is not used, it is left unconnected.
Hardware RECALL (Power Up)
During power up or after any low power condition (VCC <
VRESET), an internal RECALL request is latched. When VCC
once again exceeds the sense voltage of VSWITCH, a RECALL
cycle is automatically initiated and takes tHRECALL to complete.
If the STK14C88-3 is in a WRITE state at the end of power up
RECALL, the SRAM data is corrupted. To help avoid this
situation, a 10 Kohm resistor is connected either between WE
and system VCC or between CE and system VCC.
Software STORE
Data is transferred from the SRAM to the nonvolatile memory
by a software address sequence. The STK14C88-3 software
STORE cycle is initiated by executing sequential CE controlled
READ cycles from six specific address locations in exact
order. During the STORE cycle, an erase of the previous
nonvolatile data is first performed followed by a program of the
nonvolatile elements. When a STORE cycle is initiated, input
and output are disabled until the cycle is completed.
Because a sequence of READs from specific addresses is
used for STORE initiation, it is important that no other READ
or WRITE accesses intervene in the sequence. If they
intervene, the sequence is aborted and no STORE or RECALL
takes place.
To initiate the software STORE cycle, the following READ
sequence is performed:
1. Read address 0x0E38, Valid READ
2. Read address 0x31C7, Valid READ
3. Read address 0x03E0, Valid READ
4. Read address 0x3C1F, Valid READ
5. Read address 0x303F, Valid READ
6. Read address 0x0FC0, Initiate STORE cycle
The software sequence is clocked with CE controlled READs.
When the sixth address in the sequence is entered, the
STORE cycle commences and the chip is disabled. It is
important that READ cycles and not WRITE cycles are used
in the sequence. It is not necessary that OE is LOW for a valid
sequence. After the tSTORE cycle time is fulfilled, the SRAM is
again activated for READ and WRITE operation.
Figure 3. AutoStore Inhibit Mode
[+] Feedback


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