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2SJ74 Folha de dados(PDF) 1 Page - Toshiba Semiconductor |
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2SJ74 Folha de dados(HTML) 1 Page - Toshiba Semiconductor |
1 / 5 page 2SJ74 2003-03-25 1 TOSHIBA Field Effect Transistor Silicon P Channel Junction Type 2SJ74 Low Noise Audio Amplifier Applications · Recommended for first stages of EQ amplifiers and M.C. head amplifiers. · High |Yfs|: |Yfs| = 22 mS (typ.) (VDS = −10 V, VGS = 0, IDSS = −3 mA) · Low noise: En = 0.95 nV/Hz1/2 (typ.) (VDS = −10 V, ID = −1 mA, f = 1 kHz) · High input impedance: IGSS = 1.0 nA (max) (VGS = 25 V) · Complimentary to 2SK170 Maximum Ratings (Ta ==== 25°C) Characteristics Symbol Rating Unit Gate-drain voltage VGDS 25 V Gate current IG -10 mA Drain power dissipation PD 400 mW Junction temperature Tj 125 °C Storage temperature range Tstg -55~125 °C Electrical Characteristics (Ta ==== 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Gate cut-off current IGSS VGS = 25 V, VDS = 0 ¾ ¾ 1.0 nA Gate-drain breakdown voltage V (BR) GDS VDS = 0, IG = 100 mA 25 ¾ ¾ V Drain current IDSS (Note) VDS = -10 V, VGS = 0 -2.6 ¾ -20 mA Gate-source cut-off voltage VGS (OFF) VDS = -10 V, ID = -0.1 mA 0.15 ¾ 2.0 V Forward transfer admittance ïYfsï VDS = -10 V, VGS = 0, f = 1 kHz 8 22 ¾ mS Input capacitance Ciss VDS = -10 V, VGS = 0, f = 1 MHz ¾ 105 ¾ pF Reverse transfer capacitance Crss VDG = -10 V, ID = 0, f = 1 MHz ¾ 32 ¾ pF NF (1) VDS = -10 V, ID = -1 mA, RG = 1 kW, f = 10 Hz ¾ 1.0 10 Noise figure NG (2) VDS = -10 V, ID = -1 mA, RG = 1 kW, f = 1 kHz ¾ 0.5 2 dB Note: IDSS classification GR: -2.6~-6.5 mA, BL: -6.0~-12 mA, V: -10~-20 mA Unit: mm JEDEC TO-92 JEITA SC-43 TOSHIBA 2-5F1D Weight: 0.21 g (typ.) |
Nº de peça semelhante - 2SJ74 |
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Descrição semelhante - 2SJ74 |
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