930104701 datasheet(10/16 Pages) ATMEL

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930104701 Folha de dados(PDF) 10 Page - ATMEL Corporation

Nome de Peças	930104701

Descrição Electrónicos	Rad. Tolerant 128Kx8, 5-Volt Very Low Power CMOS SRAM

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Fabricante Electrônico	ATMEL [ATMEL Corporation]

Página de início	http://www.atmel.com

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10 / 16 page

4151N–AERO–04/09

M65608E

Write Cycle 3 CS1 or

CS2, Controlled

Note:

The internal write time of the memory is defined by the overlap of CS1 Low and CS2 HIGH and W LOW. Both signals must be

actived to initiate a write and either signal can terminate a write by going in actived. The data input setup and hold timing should

be referenced to the actived edge of the signal that terminates the write. Data out is high impedance if OE =

VIH.

Fabricante Electrônico	Nome de Peças	Folha de dados	Descrição Electrónicos
ATMEL Corporation	930105201	291Kb / 13P	Rad Hard 512K x 8 5V Tolerant Very Low Power CMOS SRAM
	930105201	352Kb / 13P	Rad Hard 512K x 8 5V Tolerant Very Low Power CMOS SRAM
	930105202	77Kb / 7P	Rad Hard 512K x 8 Very Low Power CMOS SRAM
	930105202	352Kb / 13P	Rad Hard 512K x 8 Very Low Power CMOS SRAM

Fabricante Electrônico	Nome de Peças	Folha de dados	Descrição Electrónicos
ATMEL Corporation	M65608E	1Mb / 16P	Rad. Tolerant 128K x 8 5-volts Very Low Power CMOS SRAM
	M65608E	340Kb / 15P	Rad. Tolerant 128K x 8 Very Low Power 5V CMOS SRAM
	AT60142HT	319Kb / 12P	Rad Hard 512K x 8 5V Tolerant Very Low Power CMOS SRAM
	AT60142FT	291Kb / 13P	Rad Hard 512K x 8 5V Tolerant Very Low Power CMOS SRAM
	AT60142FT	352Kb / 13P	Rad Hard 512K x 8 5V Tolerant Very Low Power CMOS SRAM
	M65609E	249Kb / 14P	Rad. Hard 128K x 8 3.3-volt Very Low Power CMOS SRAM
	M65609E	1Mb / 14P	Rad Hard 128K x 8 3.3-volt Very Low Power CMOS SRAM
	AT60142F	281Kb / 13P	Rad Hard 512K x 8 Very Low Power CMOS SRAM
	AT60142F	77Kb / 7P	Rad Hard 512K x 8 Very Low Power CMOS SRAM
	AT60142E	295Kb / 17P	Rad Hard 512K x 8 Very Low Power CMOS SRAM

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