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IXZR08N120 Folha de dados(PDF) 2 Page - IXYS Corporation

Nome de Peças IXZR08N120
Descrição Electrónicos  Z-MOS RF Power MOSFET
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Fabricante Electrônico  IXYS [IXYS Corporation]
Página de início  http://www.ixys.com
Logo IXYS - IXYS Corporation

IXZR08N120 Folha de dados(HTML) 2 Page - IXYS Corporation

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IXZR08N120 & IXZR08N120A/B
Z-MOS RF Power MOSFET
Characteristic Values
(TJ = 25°C unless otherwise specified)
Symbol
Test Conditions
min.
typ.
max.
IS
VGS = 0 V
8
Α
ISM
Repetitive; pulse width limited by TJM
48
A
VSD
IF=Is, VGS=0 V, Pulse test, t ≤ 300 s, duty cycle
≤2%
1.5
V
Trr
200
ns
Source-Drain Diode
IXYS RF reserves the right to change limits, test conditions and dimensions.
IXYS RF MOSFETS are covered by one or more of the following U.S. patents:
4,835,592
4,860,072
4,881,106
4,891,686
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,486,715
5,381,025
5,640,045
6,404,065
6,583,505
6,710,463
6,727,585
6,731,002
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C unless otherwise specified)
min.
typ.
max.
RG
0.3
Ciss
1900
pF
Coss
VGS = 0 V, VDS = 0.8 VDSS(max),
f = 1 MHz
86
pF
Crss
11
pF
Td(on)
4
ns
Ton
VGS = 15 V, VDS = 0.8 VDSS
ID = 0.5 IDM
RG = 0.2 Ω (External)
5
ns
Td(off)
4
ns
Toff
6
ns
Qg(on)
39
nC
Qgs
VGS = 10 V, VDS = 0.5 VDSS
ID = 0.5 ID25 IG = 3mA
11
nC
Qgd
19
nC
Cstray
Back Metal to any Pin
33
pF
CAUTION: Operation at or above the Maximum Ratings values may impact device reliability or cause permanent damage to the device.
Information in this document is believed to be accurate and reliable. IXYSRF reserves the right to make changes to information pub-
lished in this document at any time and without notice.


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