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ACE2301BM+H Folha de dados(PDF) 1 Page - ACE Technology Co., LTD.

Nome de Peças ACE2301BM+H
Descrição Electrónicos  P-Channel Enhancement Mode MOSFET
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Fabricante Electrônico  ACE [ACE Technology Co., LTD.]
Página de início  http://www.ace-ele.com
Logo ACE - ACE Technology Co., LTD.

ACE2301BM+H Folha de dados(HTML) 1 Page - ACE Technology Co., LTD.

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ACE2301
Technology
P-Channel Enhancement Mode MOSFET
VER 1.2
1
Description
The ACE2301 is the P-Channel logic enhancement mode power field effect transistor are produced
using high cell density, DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application such as cellular phone and notebook
computer power management and Battery powered circuits, and low in-line power loss are needed in a
very small outline surface mount package.
Features
V
DS
=-20V
R
DS(ON)
,Vgs@-4.5V,Ids@-2.8A=100mΩ
R
DS(ON)
,Vgs@-2.5V,Ids@-2.0A=150mΩ
Advanced trench process technology
High Density Cell Design For Ultra Low On-Resistance
Absolute Maximum Ratings
Parameter
Symbol
Max
Unit
Drain-Source Voltage
VDS
-20
V
Gate-Source Voltage
VGS
±12
V
Continuous Drain Current
ID
-2.2
A
Pulsed Drain Current
1)
IDM
-8
A
TA=25℃
1.25
Maximum Power Dissipation
TA=70℃
PD
0.8
W
Operating Junction Temperature
TJ
-55 to 150
OC
Storage Temperature Range
TSTG
-55 to 150
OC
Junction to Ambient Thermal Resistance (PCB mounted)
2)
RθJA
140
OC/W
Note: 1.Repetitive Rating: Pulse width limited by the maximum junction temperature.
2.1-in
2 2oz Cu PCB board.
3.Guaranteed by design; not subject to production testing.


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