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ACE2341 Folha de dados(PDF) 3 Page - ACE Technology Co., LTD. |
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ACE2341 Folha de dados(HTML) 3 Page - ACE Technology Co., LTD. |
3 / 8 page ACE2341 Technology P-Channel Enhancement Mode MOSFET VER 1.2 3 Electrical Characteristics (TA=25 , ℃ Unless otherwise noted) Parameter Symbol Conditions Min. Typ Max. Unit Static Drain-Source Breakdown Voltage V(BR)DSS VGS=0V, ID=-250uA -20 Gate Threshold Voltage VGS(th) VDS=VGS, ID=-250uA -0.35 -0.9 V Gate Leakage Current IGSS VDS=0.V, VGS=±12V ±100 nA VDS=-20V, VGS=0V -1 Zero Gate Voltage Drain Current IDSS VDS=-20V, VGS=0V TJ=55℃ -10 uA On-State Drain Current ID(ON) VDS≦-5V, VGS=-4.5V -6 A VGS=-4.5V, ID=-3.3A 0.036 0.045 VGS=-2.5V, ID=-2.8A 0.045 0.055 Drain-Source On-Resistance RDS(ON) VGS=-1.8V, ID=-2.3A 0.055 0.065 Ω Forward Transconductance Gfs VDS=-5.0V, ID=-3.3A 3 S Diode Forward Voltage VSD IS=-1.6A, VGS=0V -0.8 -1.2 V Dynamic Total Gate Charge Qg 8 13 Gate-Source Charge Qgs 1.2 Gate-Drain Charge Qgd VDS=-6V, VGS=-4.5V, ID≣-3.3A 2.2 nC Input Capacitance Ciss 700 Output Capacitance Coss 160 Reverse Transfer Capacitance Crss VDS=-6V, VGS=0V, f=1MHz 120 pF td(on) 15 25 Turn-On Time tr 35 55 td(off) 60 90 Turn-Off Time tf VDD=-6V, RL=6Ω ID≡-1.0A, VGEN=-4.5V RG=6Ω 40 60 ns |
Nº de peça semelhante - ACE2341 |
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Descrição semelhante - ACE2341 |
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