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MV31020 Folha de dados(PDF) 1 Page - Microsemi Corporation

Nome de Peças MV31020
Descrição Electrónicos  GaAs Varactor Diodes Hyperabrupt
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Fabricante Electrônico  MICROSEMI [Microsemi Corporation]
Página de início  http://www.microsemi.com
Logo MICROSEMI - Microsemi Corporation

MV31020 Folha de dados(HTML) 1 Page - Microsemi Corporation

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MV30011 – MV34010
Microsemi
Microwave Products
75 Technology Drive, Lowell, MA. 01851, 978-442-5600, Fax: 978-937-3748
Page
1
GaAs Varactor Diodes
Hyperabrupt
TM
®
Copyright
 2008
Rev: 2009-05-11
Features
High Q Values for Higher Frequency Performance
Large Tuning Ratios
Low Reverse Current
Gamma Values to 1.5
Available as Bondable Chips and as
Packaged Diodes
Available in Chip-on-Board Packaging
Custom Designs Available
Applications
VCOs
Phase-Locked Oscillators
High Q Tunable Filters
Phase Shifters
Pre-Selectors
Maximum Ratings
Description
Microsemi’s GaAs hyperabrupt junction varactor
diodes are fabricated from epitaxial layers grown
at Microsemi by the Chemical Vapor Deposition
technique. The layers are processed at using
proprietary techniques resulting in varactors with
constant gamma, high Q factor and repeatable
tuning curves. These varactors are available in a
variety
of
microwave
ceramic
packages
or
bondable chips for operation from UHF to
millimeter wave frequencies.
Reverse Voltage
Breakdown Voltage
Forward Current
50 mA @ 25°C
Incident Power
+20 dBm @ 25°C
Operating Temperature
-55°C to +175°C
Storage Temperature
-55°C to +200°C
IMPORTANT:
For the most current data, consult our website: www.MICROSEMI.com
Specifications are subject to change. Consult factory for the latest information
.
These devices are ESD sensitive and must be handled using ESD precautions.
1 The MS3000 Series of products are
supplied with a RoHS complaint Gold finish
.


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