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RZF030P01 Folha de dados(PDF) 1 Page - Rohm |
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RZF030P01 Folha de dados(HTML) 1 Page - Rohm |
1 / 6 page 1/5 www.rohm.com ○ c 2009 ROHM Co., Ltd. All rights reserved. 2009.01 - Rev.A 1.5V Drive Pch MOSFET RZF030P01 Structure Silicon P-channel MOSFET Features 1) Low on-resistance. 2) High power package. 3) Low voltage drive. (1.5V) Applications Switching Dimensions (Unit : mm) (1) Gate (2) Source (3) Drain TUMT3 Abbreviated symbol : YD Packaging specifications Package Code Taping Basic ordering unit (pieces) RZF030P01 TL 3000 Type Equivalent circuit (1) Gate (2) Source (3) Drain ∗2 ∗1 ESD PROTECTION DIODE ∗2 BODY DIODE ∗1 (2) (1) (3) Absolute maximum ratings (Ta=25 °C) ∗1 ∗2 ∗1 Parameter V VDSS Symbol V VGSS A ID A IDP A IS A ISP W PD °C Tch °C Tstg Limits Unit Drain-source voltage Gate-source voltage Drain current Total power dissipation Channel temperature Range of Storage temperature Continuous Pulsed Continuous Pulsed ∗1 Pw≤10µs, Duty cycle≤1% ∗2 Mounted on a ceramic board Source current (Body diode) −12 ±10 ±3 ±12 −0.65 −12 0.8 150 −55 to +150 Thermal resistance Parameter °C / W Rth(ch-a) Symbol Limits Unit Channel to ambient ∗ Mounted on a ceramic board. 156 ∗ |
Nº de peça semelhante - RZF030P01 |
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Descrição semelhante - RZF030P01 |
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