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Os motores de busca de Datasheet de Componentes eletrônicos |
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Os motores de busca de Datasheet de Componentes eletrônicos |
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IRLR8256PBF Folha de dados(PDF) 2 Page - International Rectifier |
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IRLR8256PBF Folha de dados(HTML) 2 Page - International Rectifier |
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2 / 11 page  IRLR/U8256PbF 2 www.irf.com Static @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units BVDSS Drain-to-Source Breakdown Voltage 25 ––– ––– V ∆ΒVDSS/∆TJ Breakdown Voltage Temp. Coefficient –––18––– mV/°C ––– 4.2 5.7 ––– 6.7 8.5 VGS(th) Gate Threshold Voltage 1.35 1.8 2.35 V ∆VGS(th)/∆TJ Gate Threshold Voltage Coefficient ––– -7.2 ––– mV/°C ––– ––– 1.0 ––– ––– 150 Gate-to-Source Forward Leakage ––– ––– 100 Gate-to-Source Reverse Leakage ––– ––– -100 gfs Forward Transconductance 81 ––– ––– S Qg Total Gate Charge ––– 10 15 Qgs1 Pre-Vth Gate-to-Source Charge ––– 2.3 ––– Qgs2 Post-Vth Gate-to-Source Charge ––– 1.6 ––– nC Qgd Gate-to-Drain Charge ––– 3.6 ––– Qgodr Gate Charge Overdrive ––– 2.6 ––– See Fig. 16 Qsw Switch Charge (Qgs2 + Qgd) ––– 5.1 ––– Qoss Output Charge ––– 9.0 ––– nC RG Gate Resistance ––– 2.5 3.9 Ω td(on) Turn-On Delay Time ––– 9.7 ––– tr Rise Time –––46––– td(off) Turn-Off Delay Time –––12––– tf Fall Time ––– 8.5 ––– Ciss Input Capacitance ––– 1470 ––– Coss Output Capacitance ––– 453 ––– Crss Reverse Transfer Capacitance ––– 185 ––– Avalanche Characteristics Parameter Units EAS Single Pulse Avalanche Energy d mJ IAR Avalanche Current à A EAR Repetitive Avalanche Energy mJ Diode Characteristics Parameter Min. Typ. Max. Units IS Continuous Source Current (Body Diode) ISM Pulsed Source Current (Body Diode) à VSD Diode Forward Voltage ––– ––– 1.0 V trr Reverse Recovery Time ––– 1929ns Qrr Reverse Recovery Charge ––– 17 26 nC ton Forward Turn-On Time IGSS RDS(on) Static Drain-to-Source On-Resistance IDSS Drain-to-Source Leakage Current ––– ––– ––– ––– m Ω 81 f 325 µA nA ns pF A Conditions 6.3 See Fig. 14 Max. 86 20 ƒ = 1.0MHz VGS = 4.5V, ID = 20A e VGS = 20V VGS = -20V VDS = 13V, ID = 20A VDS = 20V, VGS = 0V VDS = 20V, VGS = 0V, TJ = 125°C Conditions VGS = 0V, ID = 250µA Reference to 25°C, ID = 1mA VGS = 10V, ID = 25A e VDS = 16V, VGS = 0V VDD = 13V, VGS = 4.5Ve VDS = VGS, ID = 25µA RG = 1.8Ω VDS = 13V ID = 20A TJ = 25°C, IF = 20A, VDD = 13V di/dt = 300A/µs e TJ = 25°C, IS = 20A, VGS = 0V e showing the integral reverse p-n junction diode. Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) MOSFET symbol ––– VGS = 4.5V Typ. ––– ––– ID = 20A VGS = 0V VDS = 13V |
Nº de peça semelhante - IRLR8256PBF |
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Descrição semelhante - IRLR8256PBF |
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