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1PS10SB82 Folha de dados(PDF) 4 Page - NXP Semiconductors |
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1PS10SB82 Folha de dados(HTML) 4 Page - NXP Semiconductors |
4 / 7 page 2003 Aug 20 4 NXP Semiconductors Product data sheet Schottky barrier diode 1PS10SB82 GRAPHICAL DATA handbook, halfpage 1.6 0 (1) (3) 0.4 0.8 1.2 VF (V) IF (mA) 103 102 10 1 MLE112 (2) (2) (1) (3) Fig.2 Forward current as a function of forward voltage; typical values. (1) Tamb = 125 °C. (2) Tamb = 85 °C. (3) Tamb = 25 °C. handbook, halfpage 15 10 VR (V) IR ( μA) 5 0 MLE113 103 102 10 1 10−1 10−2 (3) (1) (2) Fig.3 Reverse current as a function of reverse voltage; typical values. (1) Tamb = 125 °C. (2) Tamb = 85 °C. (3) Tamb = 25 °C. handbook, halfpage 02 10 1.2 1 0.6 0.4 0.8 4 VR (V) Cd (pF) 68 MLE114 Fig.4 Diode capacitance as a function of reverse voltage; typical values. f = 1 MHz; Tamb = 25 °C. handbook, halfpage 103 102 10 1 MLE115 10−1 1 IF (mA) rD ( Ω) 10 102 Fig.5 Differential diode forward resistance as a function of forward current; typical values. f = 1 MHz; Tamb = 25 °C. |
Nº de peça semelhante - 1PS10SB82 |
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Descrição semelhante - 1PS10SB82 |
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