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74ABT823DB Folha de dados(PDF) 5 Page - NXP Semiconductors |
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74ABT823DB Folha de dados(HTML) 5 Page - NXP Semiconductors |
5 / 17 page 74ABT823_3 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved. Product data sheet Rev. 03 — 23 March 2010 5 of 17 NXP Semiconductors 74ABT823 9-bit D-type flip-flop with reset and enable; 3-state 6. Functional description 6.1 Function table [1] H = HIGH voltage level; L = LOW voltage level; h = HIGH voltage level one set-up time prior to the LOW-to-HIGH clock transition; I = LOW voltage level one set-up time prior to the LOW-to-HIGH clock transition; ↑ = LOW-to-HIGH clock transition; NC = no change; X = don’t care; Z = high-impedance OFF-state. 7. Limiting values [1] The input and output voltage ratings may be exceeded if the input and output current ratings are observed. [2] The performance capability of a high-performance integrated circuit in conjunction with its thermal environment can create junction temperatures which are detrimental to reliability. The maximum junction temperature of this integrated circuit should not exceed 150 °C. Table 3. Function table[1] Input Output Operating mode OE MR CE CP Dn Qn L L X X X L clear L H L ↑ h H load and read data L H L ↑ l L L H H NC X NC hold H X X X X Z high-impedance Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VCC supply voltage −0.5 +7.0 V VI input voltage [1] −1.2 +7.0 V VO output voltage output in OFF-state or HIGH-state [1] −0.5 +5.5 V IIK input clamping current VI < 0 V −18 - mA IOK output clamping current VO < 0 V −50 - mA IO output current output in LOW-state - 128 mA Tj junction temperature [2] - 150 °C Tstg storage temperature −65 +150 °C |
Nº de peça semelhante - 74ABT823DB |
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Descrição semelhante - 74ABT823DB |
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