Os motores de busca de Datasheet de Componentes eletrônicos
  Portuguese  ▼
ALLDATASHEETPT.COM

X  

BCP52 Folha de dados(PDF) 7 Page - NXP Semiconductors

Nome de Peças BCP52
Descrição Electrónicos  60 V, 1 A PNP medium power transistors
Download  12 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Fabricante Electrônico  NXP [NXP Semiconductors]
Página de início  http://www.nxp.com
Logo NXP - NXP Semiconductors

BCP52 Folha de dados(HTML) 7 Page - NXP Semiconductors

Back Button BCP52 Datasheet HTML 3Page - NXP Semiconductors BCP52 Datasheet HTML 4Page - NXP Semiconductors BCP52 Datasheet HTML 5Page - NXP Semiconductors BCP52 Datasheet HTML 6Page - NXP Semiconductors BCP52 Datasheet HTML 7Page - NXP Semiconductors BCP52 Datasheet HTML 8Page - NXP Semiconductors BCP52 Datasheet HTML 9Page - NXP Semiconductors BCP52 Datasheet HTML 10Page - NXP Semiconductors BCP52 Datasheet HTML 11Page - NXP Semiconductors Next Button
Zoom Inzoom in Zoom Outzoom out
 7 / 12 page
background image
BCP52_BCX52_8
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 08 — 25 February 2008
7 of 12
NXP Semiconductors
BCP52; BCX52
60 V, 1 A PNP medium power transistors
7.
Characteristics
[1]
Pulse test: tp ≤ 300 µs; δ = 0.02.
FR4 PCB, mounting pad for collector 6 cm2
Fig 7.
Transient thermal impedance from junction to ambient as a function of pulse duration for SOT89;
typical values
006aaa818
10
1
102
103
Zth(j-a)
(K/W)
10−1
10−5
10
10−2
10−4
102
10−1
tp (s)
10−3
103
1
duty cycle =
0.01
0
0.02
0.05
0.1
0.2
0.33
0.5
0.75
1.0
Table 8.
Characteristics
Tamb =25 °C unless otherwise specified.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
ICBO
collector-base cut-off
current
VCB = −30 V; IE =0A;
-
-
−100
nA
VCB = −30 V; IE =0A;
Tj = 150 °C
--
−10
µA
IEBO
emitter-base cut-off
current
VEB = −5 V; IC =0A
-
-
−100
nA
hFE
DC current gain
VCE = −2V
IC = −5mA
63
-
-
IC = −150 mA
63
-
250
IC = −500 mA
[1] 40
-
-
DC current gain
VCE = −2V
hFE selection -10
IC = −150 mA
63
-
160
hFE selection -16
IC = −150 mA
100
-
250
VCEsat
collector-emitter
saturation voltage
IC = −500 mA;
IB = −50 mA
[1] --
−0.5
V
VBE
base-emitter voltage
VCE = −2 V; IC = −500 mA [1] --
−1V
Cc
collector capacitance
VCB = −10 V; IE =ie =0A;
f=1MHz
-15
-
pF
fT
transition frequency
VCE = −5 V; IC = −50 mA;
f = 100 MHz
-
145
-
MHz


Nº de peça semelhante - BCP52

Fabricante ElectrônicoNome de PeçasFolha de dadosDescrição Electrónicos
logo
NXP Semiconductors
BCP52 PHILIPS-BCP52 Datasheet
44Kb / 8P
   PNP medium power transistors
1999 Apr 08
logo
SHENZHEN YONGERJIA INDU...
BCP52 WINNERJOIN-BCP52 Datasheet
194Kb / 3P
   TRANSISTOR (PNP)
logo
Nexperia B.V. All right...
BCP52 NEXPERIA-BCP52 Datasheet
1Mb / 22P
   60 V, 1 A PNP medium power transistors
Rev. 9 - 18 October 2011
logo
STMicroelectronics
BCP52 STMICROELECTRONICS-BCP52 Datasheet
71Kb / 4P
   MEDIUM POWER AMPLIFIER
October 1997
logo
NXP Semiconductors
BCP52 NXP-BCP52 Datasheet
1Mb / 22P
   PNP medium power transistor series in Surface-Mounted Device (SMD) plastic packages.
Rev. 9-18 October 2011
More results

Descrição semelhante - BCP52

Fabricante ElectrônicoNome de PeçasFolha de dadosDescrição Electrónicos
logo
NXP Semiconductors
BCP52 NXP-BCP52_13 Datasheet
1Mb / 22P
   60 V, 1 A PNP medium power transistors
Rev. 9-18 October 2011
BCP52 PHILIPS-BCP52_15 Datasheet
1Mb / 22P
   60 V, 1 A PNP medium power transistors
Rev. 9-18 October 2011
logo
Nexperia B.V. All right...
BC52XPAS_SER NEXPERIA-BC52XPAS_SER Datasheet
261Kb / 11P
   60 V, 1 A PNP medium power transistors
6 December 2022
BCP52 NEXPERIA-BCP52 Datasheet
1Mb / 22P
   60 V, 1 A PNP medium power transistors
Rev. 9 - 18 October 2011
BCP52T_SER NEXPERIA-BCP52T_SER Datasheet
273Kb / 14P
   60 V, 1 A PNP medium power transistors
Rev. 1 - 29 April 2019
BC51PAS NEXPERIA-BC51PAS Datasheet
903Kb / 15P
   45 V/60 V/80 V, 1 A PNP medium power transistors
BSR31 NEXPERIA-BSR31 Datasheet
180Kb / 7P
   60 V, 1 A PNP medium power transistor
10 March 2023
BSR31-Q NEXPERIA-BSR31-Q Datasheet
181Kb / 7P
   60 V, 1 A PNP medium power transistor
10 March 2023
BSR30 NEXPERIA-BSR30 Datasheet
181Kb / 7P
   60 V, 1 A PNP medium power transistor
10 March 2023
BSR30-Q NEXPERIA-BSR30-Q Datasheet
181Kb / 7P
   60 V, 1 A PNP medium power transistor
10 March 2023
More results


Html Pages

1 2 3 4 5 6 7 8 9 10 11 12


Folha de dados Download

Go To PDF Page


Ligação URL




Privacy Policy
ALLDATASHEETPT.COM
ALLDATASHEET é útil para você?  [ DONATE ] 

Sobre Alldatasheet   |   Publicidade   |   Contato conosco   |   Privacy Policy   |   roca de Link   |   Lista de Fabricantes
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com