STPSC806_09 datasheet(1/7 Pages) STMICROELECTRONICS

Nome de Peças	STPSC806

Descrição Electrónicos	600 V power Schottky silicon carbide diode

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Fabricante Electrônico	STMICROELECTRONICS [STMicroelectronics]

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September 2009

Doc ID 16286 Rev 1

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STPSC806

600 V power Schottky silicon carbide diode

Features

■ No or negligible reverse recovery

■ Switching behavior independent of

temperature

■ Particularly suitable in PFC boost diode

function

Description

The SiC diode is an ultrahigh performance power

Schottky diode. It is manufactured using a silicon

carbide substrate. The wide bandgap material

allows the design of a Schottky diode structure

with a 600 V rating. Due to the Schottky

construction no recovery is shown at turn-off and

ringing patterns are negligible. The minimal

capacitive turn-off behavior is independent of

temperature.

ST SiC diodes will boost the performance of PFC

operations in hard switching conditions.

Table 1.

Device summary

IF(AV)

8 A

VRRM

600 V

Tj (max)

175 °C

QC (typ)

10 nC

K

A

TO-220AC

STPSC806D

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Nº de peça semelhante - STPSC806_09

Descrição semelhante - STPSC806_09

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