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PZT3906T1G Folha de dados(PDF) 1 Page - ON Semiconductor

Nome de Peças PZT3906T1G
Descrição Electrónicos  General Purpose Transistor PNP Silicon
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Fabricante Electrônico  ONSEMI [ON Semiconductor]
Página de início  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

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© Semiconductor Components Industries, LLC, 2006
March, 2006 − Rev. 2
1
Publication Order Number:
PZT3906T1/D
PZT3906T1
Preferred Device
General Purpose Transistor
PNP Silicon
Features
Pb−Free Package is Available
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector−Emitter Voltage
VCEO
−40
Vdc
Collector−Base Voltage
VCBO
−40
Vdc
Emitter−Base Voltage
VEBO
−5.0
Vdc
Collector Current − Continuous
IC
−200
mAdc
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation (Note 1)
TA = 25°C
PD
1.5
12
W
mW/°C
Thermal Resistance Junction−to−Ambient
(Note 1)
RqJA
83.3
°C/W
Thermal Resistance Junction−to−Lead #4
RqJA
35
°C/W
Junction and Storage Temperature Range
TJ, Tstg
−55 to
+150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−4 with 1 oz and 713 mm2 of copper area.
http://onsemi.com
COLLECTOR
2, 4
1
BASE
3
EMITTER
Preferred devices are recommended choices for future use
and best overall value.
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Device
Package
Shipping
ORDERING INFORMATION
PZT3906T1
SOT−223
1000 / Tape & Reel
PZT3906T1G
SOT−223
(Pb−Free)
1000 / Tape & Reel
MARKING
DIAGRAM
1
AYW
2A G
G
2A
= Specific Device Code
A
= Assembly Location
Y
= Year
W
= Work Week
G
= Pb−Free Package
(Note: Microdot may be in either location)


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