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KM416C4004C Folha de dados(PDF) 6 Page - Samsung semiconductor |
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KM416C4004C Folha de dados(HTML) 6 Page - Samsung semiconductor |
6 / 36 page KM416C4004C, KM416C4104C CMOS DRAM AC CHARACTERISTICS (Continued) Parameter Symbol -5 -6 Units Note Min Max Min Max Data hold time tDH 8 10 ns 9,19 Refresh period (4K, Normal) tREF 64 64 ms Refresh period (8K, Normal) tREF 64 64 ms Write command set-up time tWCS 0 0 ns 7 CAS to W delay time tCWD 30 32 ns 7,15 RAS to W delay time tRWD 67 77 ns 7 Column address W delay time tAWD 42 47 ns 7 CAS set-up time (CAS -before-RAS refresh) tCSR 5 5 ns 17 CAS hold time (CAS -before-RAS refresh) tCHR 10 10 ns 18 RAS to CAS precharge time tRPC 5 5 ns Access time from CAS precharge tCPA 28 35 ns 3 Hyper Page cycle time tHPC 20 25 ns 20 Hyper Page read-modify-write cycle time tHPRWC 47 56 ns 20 CAS precharge time (Hyper page cycle) tCP 8 10 ns 14 RAS pulse width (Hyper page cycle) tRASP 50 200K 60 200K ns RAS hold time from CAS precharge tRHCP 30 35 ns OE access time tOEA 13 15 ns OE to data delay tOED 13 13 ns CAS precharge to W delay time tCPWD 45 54 ns Output buffer turn off delay time from OE tOEZ 3 13 3 13 ns 6 OE command hold time tOEH 13 15 ns Write command set-up time (Test mode in) tWTS 10 10 ns 11 Write command hold time (Test mode in) tWTH 10 10 ns 11 W to RAS precharge time (C-B-R refresh) tWRP 10 10 ns W to RAS hold time (C-B-R refresh) tWRH 10 10 ns Output data hold time tDOH 5 5 ns Output buffer turn off delay from RAS tREZ 3 13 3 13 ns 6,21 Output buffer turn off delay from W tWEZ 3 13 3 13 ns 6 W to data delay tWED 15 15 ns OE to CAS hold time tOCH 5 5 ns CAS hold time to OE tCHO 5 5 ns OE precharge time tOEP 5 5 ns W pulse width (Hyper page cycle) tWPE 5 5 ns RAS pulse width (C-B-R self refresh) tRASS 100 100 us 22,23,24 RAS precharge time (C-B-R self refresh) tRPS 90 110 ns 22,23,24 CAS hold time (C-B-R self refresh) tCHS -50 -50 ns 22,23,24 |
Nº de peça semelhante - KM416C4004C |
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Descrição semelhante - KM416C4004C |
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