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KM416C4100C Folha de dados(PDF) 4 Page - Samsung semiconductor |
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KM416C4100C Folha de dados(HTML) 4 Page - Samsung semiconductor |
4 / 35 page KM416C4000C, KM416C4100C CMOS DRAM *Note : ICC1, ICC3, ICC4 and ICC6 are dependent on output loading and cycle rates. Specified values are obtained with the output open. ICC is specified as an average current. In ICC1, ICC3 and ICC6, address can be changed maximum once while RAS=VIL. In ICC4, address can be changed maximum once within one fast page mode cycle time, tPC. DC AND OPERATING CHARACTERISTICS (Continued) ICC1* : Operating Current (RAS and UCAS, LCAS, Address cycling @ tRC=min.) ICC2 : Standby Current (RAS=UCAS=LCAS=W=VIH) ICC3* : RAS-only Refresh Current (UCAS=LCAS=VIH, RAS, Address cycling @ tRC=min.) ICC4* : Fast Page Mode Current (RAS=VIL, UCAS or LCAS, Address cycling @ tPC=min.) ICC5 : Standby Current (RAS=UCAS=LCAS=W=VCC-0.2V) ICC6* : CAS-Before-RAS Refresh Current (RAS and UCAS or LCAS cycling @ tRC=min) Symbol Power Speed Max Units KM416C4000C KM416C4100C ICC1 Don ′t care -5 -6 90 80 120 110 mA mA ICC2 Normal Don ′t care 2 2 mA ICC3 Don ′t care -5 -6 90 80 120 110 mA mA ICC4 Don ′t care -5 -6 60 50 70 60 mA mA ICC5 Normal Don ′t care 1 1 mA ICC6 Don ′t care -5 -6 120 110 120 110 mA mA |
Nº de peça semelhante - KM416C4100C |
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Descrição semelhante - KM416C4100C |
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