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KM416C1204C-L45 Folha de dados(PDF) 5 Page - Samsung semiconductor

Nome de Peças KM416C1204C-L45
Descrição Electrónicos  1M x 16Bit CMOS Dynamic RAM with Extended Data Out
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Fabricante Electrônico  SAMSUNG [Samsung semiconductor]
Página de início  http://www.samsung.com/Products/Semiconductor
Logo SAMSUNG - Samsung semiconductor

KM416C1204C-L45 Folha de dados(HTML) 5 Page - Samsung semiconductor

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KM416C1004C, KM416C1204C
CMOS DRAM
KM416V1004C, KM416V1204C
CAPACITANCE (TA=25
°C, VCC=5V or 3.3V, f=1MHz)
Parameter
Symbol
Min
Max
Units
Input capacitance [A0 ~ A11]
CIN1
-
5
pF
Input capacitance [RAS, UCAS, LCAS, W, OE]
CIN2
-
7
pF
Output capacitance [DQ0 - DQ15]
CDQ
-
7
pF
Test condition (5V device) : VCC=5.0V
±10%, Vih/Vil=2.4/0.8V, Voh/Vol=2.0/0.8V
Parameter
Symbol
-45
-5
-6
Units
Notes
Min
Max
Min
Max
Min
Max
Random read or write cycle time
tRC
79
84
104
ns
Read-modify-write cycle time
tRWC
105
115
140
ns
Access time from RAS
tRAC
45
50
60
ns
3,4,10
Access time from CAS
tCAC
14
15
17
ns
3,4,5
Access time from column address
tAA
23
25
30
ns
3,10
CAS to output in Low-Z
tCLZ
3
3
3
ns
3
Output buffer turn-off delay from CAS
tCEZ
3
13
3
13
3
15
ns
6,19
OE to output in Low-Z
tOLZ
3
3
3
ns
3
Transition time (rise and fall)
tT
2
50
2
50
2
50
ns
2
RAS precharge time
tRP
30
30
40
ns
RAS pulse width
tRAS
45
10K
50
10K
60
10K
ns
RAS hold time
tRSH
13
13
17
ns
CAS hold time
tCSH
36
40
50
ns
CAS pulse width
tCAS
7
10K
8
10K
10
10K
ns
18
RAS to CAS delay time
tRCD
19
31
20
35
20
43
ns
4
RAS to column address delay time
tRAD
14
22
15
25
15
30
ns
10
CAS to RAS precharge time
tCRP
5
5
5
ns
Row address set-up time
tASR
0
0
0
ns
Row address hold time
tRAH
9
10
10
ns
Column address set-up time
tASC
0
0
0
ns
11
Column address hold time
tCAH
7
8
10
ns
11
Column address to RAS lead time
tRAL
23
25
30
ns
Read command set-up time
tRCS
0
0
0
ns
Read command hold time referenced to CAS
tRCH
0
0
0
ns
8
Read command hold time referenced to RAS
tRRH
0
0
0
ns
8
Write command hold time
tWCH
8
10
10
ns
Write command pulse width
tWP
8
10
10
ns
Write command to RAS lead time
tRWL
10
13
15
ns
Write command to CAS lead time
tCWL
7
8
10
ns
14
AC CHARACTERISTICS (0
°C≤TA≤70°C, See note 1,2)
Test condition (3.3V device) : VCC=3.3V
±0.3V, Vih/Vil=2.2/0.7V, Voh/Vol=2.0/0.8V


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