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KM416C10CJ-L5 Folha de dados(PDF) 4 Page - Samsung semiconductor |
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KM416C10CJ-L5 Folha de dados(HTML) 4 Page - Samsung semiconductor |
4 / 35 page KM416C1004C, KM416C1204C CMOS DRAM KM416V1004C, KM416V1204C *Note : ICC1, ICC3, ICC4 and ICC6 are dependent on output loading and cycle rates. Specified values are obtained with the output open. ICC is specified as an average current. In ICC1, ICC3 and ICC6, address can be changed maximum once while RAS=VIL. In ICC4, address can be changed maximum once within one Hyper page mode cycle time, tHPC. DC AND OPERATING CHARACTERISTICS (Continued) ICC1* : Operating Current (RAS and UCAS, LCAS, Address cycling @tRC=min.) ICC2 : Standby Current (RAS=UCAS=LCAS=W=VIH) ICC3* : RAS-only Refresh Current (UCAS=LCAS=VIH, RAS, Address cycling @tRC=min.) ICC4* : Hyper Page Mode Current (RAS=VIL, UCAS or LCAS, Address cycling @tHPC=min.) ICC5 : Standby Current (RAS=UCAS=LCAS=W=VCC-0.2V) ICC6* : CAS-Before-RAS Refresh Current (RAS, UCAS or LCAS cycling @tRC=min.) ICC7 : Battery back-up current, Average power supply current, Battery back-up mode Input high voltage(VIH)=VCC-0.2V, Input low voltage(VIL)=0.2V, UCAS, LCAS=0.2V, DQ=Don ′t care, TRC=31.25us(4K/L-ver), 125us(1K/L-ver) TRAS=TRASmin~300ns ICCS : Self Refresh Current RAS=UCAS=LCAS=VIL, W=OE=A0 ~ A11=VCC-0.2V or 0.2V, DQ0 ~ DQ15=VCC-0.2V, 0.2V or Open Symbol Power Speed Max Units KM416V1004C KM416V1204C KM416C1004C KM416C1204C ICC1 Don ′t care -45 -5 -6 100 90 80 150 140 130 100 90 80 150 140 130 mA mA mA ICC2 Normal L Don ′t care 1 1 1 1 2 1 2 1 mA mA ICC3 Don ′t care -45 -5 -6 100 90 80 150 140 130 100 90 80 150 140 130 mA mA mA ICC4 Don ′t care -45 -5 -6 110 100 90 110 100 90 110 100 90 110 100 90 mA mA mA ICC5 Normal L Don ′t care 0.5 200 0.5 200 1 200 1 200 mA uA ICC6 Don ′t care -45 -5 -6 100 90 80 150 140 130 110 90 80 150 140 130 mA mA mA ICC7 L Don ′t care 300 200 350 250 uA ICCS L Don ′t care 150 150 200 200 uA |
Nº de peça semelhante - KM416C10CJ-L5 |
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Descrição semelhante - KM416C10CJ-L5 |
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