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KM416RD16D Folha de dados(PDF) 4 Page - Samsung semiconductor |
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KM416RD16D Folha de dados(HTML) 4 Page - Samsung semiconductor |
4 / 64 page Page 1 KM416RD8AC(D)/KM418RD8AC(D) Direct RDRAM™ Rev. 1.01 Oct. 1999 Overview The Rambus Direct RDRAM™ is a general purpose high- performance memory device suitable for use in a broad range of applications including computer memory, graphics, video, and any other application where high bandwidth and low latency are required. The 128/144-Mbit Direct Rambus DRAMs (RDRAM®) are extremely high-speed CMOS DRAMs organized as 8M words by 16 or 18 bits. The use of Rambus Signaling Level (RSL) technology permits 600MHz to 800MHz transfer rates while using conventional system and board design technologies. Direct RDRAM devices are capable of sustained data transfers at 1.25 ns per two bytes (10ns per sixteen bytes). The architecture of the Direct RDRAMs allows the highest sustained bandwidth for multiple, simultaneous randomly addressed memory transactions. The separate control and data buses with independent row and column control yield over 95% bus efficiency. The Direct RDRAM's thirty-two banks support up to four simultaneous transactions. System oriented features for mobile, graphics and large memory systems include power management, byte masking, and x18 organization. The two data bits in the x18 organiza- tion are general and can be used for additional storage and bandwidth or for error correction. Features ♦ Highest sustained bandwidth per DRAM device - 1.6GB/s sustained data transfer rate - Separate control and data buses for maximized efficiency - Separate row and column control buses for easy scheduling and highest performance - 32 banks: four transactions can take place simul- taneously at full bandwidth data rates ♦ Low latency features - Write buffer to reduce read latency - 3 precharge mechanisms for controller flexibility - Interleaved transactions ♦ Advanced power management: - Direct RDRAM operates from a 2.5 volt supply - Multiple low power states allows flexibility in power consumption versus time to transition to active state - Power-down self-refresh ♦ Organization: 1Kbyte pages and 32 banks, x 16/18 - x18 organization allows ECC configurations or increased storage/bandwidth - x16 organization for low cost applications ♦ Uses Rambus Signaling Level (RSL) for up to 800MHz operation The 128/144-Mbit Direct RDRAMs are offered in a CSP horizontal package suitable for desktop as well as low- profile add-in card and mobile applications. Key Timing Parameters/Part Numbers a.The “32s"designation indicates that this RDRAM core is composed of 32 banks which use a "split" bank architecture. b.The “C“ designator indicates the normal package and the “D“ indicates the mirrored package. c.The “R“ designator indicates that this RDRAM core uses Normal Power Self Refresh. Figure 1: Direct RDRAM CSP Package Organization Speed Part Number Bin I/O Freq. MHz tRAC (Row Access Time) ns 256Kx16x32sa -RG60 600 53.3 KM416RD8AC(Db)-RcG60 -RK70 711 45 KM416RD8AC(D)-RK70 -RK80 800 45 KM416RD8AC(D)-RK80 256Kx18x32s -RG60 600 53.3 KM418RD8AC(D)-RG60 -RK70 711 45 KM418RD8AC(D)-RK70 -RK80 800 45 KM418RD8AC(D)-RK80 SEC KOREA KM4xxRD8AC M SEC KOREA KM4xxRD8AD a. Normal Package b. Mirrored Package |
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Descrição semelhante - KM416RD16D |
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